High-Performance Analysis of Recessed Gate AlN/β-Ga2O3 HEMT

Abstract

Normally-OFF HEMT is used for power electronics application. The proposed Recessed gate AlN/β-Ga2O3 HEMT (RG-AlN/β-Ga2O3 HEMT) is enhance the performance of device. In this paper analog performance of the RG-AlN/β-Ga2O3 HEMT is analysis. Due to larger bandgap of β-Ga2O3, the proposed device will work for larger breakdown voltage. Two-dimensional electron gas (2DEG) is formed at the top of β-Ga2O3 with polarization induced field in AlN layer. No any doping is required in any layer to generate 2DEG. Dual layer of dielectric is used for enhance the analog performance and also interface quality of proposed device. Drain current (Ids), transconductance (gm), total gate capacitance (Cgg) and cutoff frequency(fT) are analysis.