Reliable design of SiC MOSFET power modules: experimental characterization for aging prediction

Abstract

This paper discusses the development of multi-chip silicon carbide semiconductor assemblies meeting the lifetime requirements of key electrical power conversion applications. Because of intrinsic differences with the established silicon technology, the need exists to devise SiC-bespoke design and validation methodologies. This work first assesses the state-of-the-art in electro-thermal parameters spread for both planar-gate and trench-gate type transistors; second, it develops a physical simulation model, which can be used to investigate the relation between device progressive degradation patterns and the initial parameters value spread.