SiGe Circuits for Future LEO Constellations

M. Margalef-Rovira, N. Defrance, G. Ducournau
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Abstract

This work presents an overview of the current state-of-the-art Power Amplifiers and Low-Noise amplifiers in the 40–75 GHz frequency band (i.e., V -band). These RF blocks are critical for the development of future LEO constellations that have recently begun to target these frequencies. Special attention is brought to GaAs, GaN, SiGe, FDSOI and classical CMOS technologies. The aim of the paper is to give a clear overview of the attainable performances with each technology as well as their relative trade-offs.
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未来狮子座星座的SiGe电路
这项工作概述了目前40-75 GHz频段(即V频段)最先进的功率放大器和低噪声放大器。这些RF块对于最近开始瞄准这些频率的未来LEO星座的发展至关重要。特别关注GaAs, GaN, SiGe, FDSOI和经典CMOS技术。本文的目的是对每种技术可实现的性能以及它们的相对权衡给出一个清晰的概述。
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