A Ka-Band SPDT Switch Utilizing Center-Tapped Inductor Resonance Network

Abstract

In this paper, a Ka-band single-pole double-throw (SPDT) with 1.6 dB insertion loss and 40 dB isolation is presented. The proposed SPDT RF switch utilizes a center-tapped inductor to resonate with the off-capacitor of the transistor. The SPDT is designed based on 65-nm CMOS process with a 0.03 mm2 core size. The simulated insertion loss of both two paths is below 1.7 dB within 26–35 GHz. The port-to-port isolation is larger than 22 dB with the highest 40 dB at 35 GHz. The input return loss and output return loss are larger than 16 dB and 14 dB, respectively. The simulated IP1dB is 9.09 dBm at 29 GHz.