S. Amoroso, F. Adamu-Lema, S. Markov, L. Gerrer, A. Asenov
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引用次数: 6
Abstract
In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes.
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