{"title":"A Graphical Insight into α Power MOSFET Model for Nanoscale CMOS Digital Technologies","authors":"Shruti Kalra","doi":"10.1109/ICSC48311.2020.9182772","DOIUrl":null,"url":null,"abstract":"It has been usually observed that conventional analytical equations utilized for building design methodologies for fundamental digital CMOS blocks are either physics or empirical based. Sakurai-Newton (SN) α-power based MOSFET model is one of the simplest empirical model that has been utilized from decades to model drain current at submicron technology node. This paper presents the pedagogical effort of the author to connect α-power based MOSFET model with Jesper-Memelink-Wallinga (JMW) representation which happens to be a popular approach for visually capturing the basic operation of long channel transistor. Connecting SN model and JMW representation enables us to visually capture the basic operation of short channel transistor also. The results obtained from the graphical representation are compared with analytical physics based MOSFET model and industry standard BSIM upto 22nm technology node.","PeriodicalId":334609,"journal":{"name":"2020 6th International Conference on Signal Processing and Communication (ICSC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 6th International Conference on Signal Processing and Communication (ICSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSC48311.2020.9182772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
It has been usually observed that conventional analytical equations utilized for building design methodologies for fundamental digital CMOS blocks are either physics or empirical based. Sakurai-Newton (SN) α-power based MOSFET model is one of the simplest empirical model that has been utilized from decades to model drain current at submicron technology node. This paper presents the pedagogical effort of the author to connect α-power based MOSFET model with Jesper-Memelink-Wallinga (JMW) representation which happens to be a popular approach for visually capturing the basic operation of long channel transistor. Connecting SN model and JMW representation enables us to visually capture the basic operation of short channel transistor also. The results obtained from the graphical representation are compared with analytical physics based MOSFET model and industry standard BSIM upto 22nm technology node.
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