{"title":"Effect of nitrogen concentrations on electrical properties of amorphous carbon thin films by using palm oil precursor","authors":"A. Ishak, K. Dayana, M. Rusop","doi":"10.1109/RSM.2013.6706533","DOIUrl":null,"url":null,"abstract":"Amorphous carbon thin films with thickness 39.6-990. 1nm on insulative glass substrates were deposited by bias-assisted pyrolysis-CVD using `green' renewable precursor palm oil. The effect of nitrogen concentrations used on electrical properties of amorphous carbon thin films was determined. The amorphous carbon thin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. Most of thin films were formed linear region with difference respond of slopes. High slope of ohmic contact for sample 220 mL/min was obtained after nitrogen doping. The sample 220 mL/min showed the optimum slope and the highest current responding. The resistivity was decreased by nitrogen concentration used where samples 220 mL/min and 70 mL/min were the lowest and the highest resistivity, respectively. We found, doping with nitrogen were increased the conductivity and photo response and decreased the resistivity of a-C thin films as compared without use of nitrogen.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Amorphous carbon thin films with thickness 39.6-990. 1nm on insulative glass substrates were deposited by bias-assisted pyrolysis-CVD using `green' renewable precursor palm oil. The effect of nitrogen concentrations used on electrical properties of amorphous carbon thin films was determined. The amorphous carbon thin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. Most of thin films were formed linear region with difference respond of slopes. High slope of ohmic contact for sample 220 mL/min was obtained after nitrogen doping. The sample 220 mL/min showed the optimum slope and the highest current responding. The resistivity was decreased by nitrogen concentration used where samples 220 mL/min and 70 mL/min were the lowest and the highest resistivity, respectively. We found, doping with nitrogen were increased the conductivity and photo response and decreased the resistivity of a-C thin films as compared without use of nitrogen.