1.3 µm whispering gallery modes observed in a Si-based rolled-up InAs/GaAs bilayer quantum dot (BQD) microtube at room-temperature

Abstract

We have successfully observed ~ 1.3 μm whispering gallery modes from a Si-based rolled-up InAs/GaAs bilayer quantum dot (BQD) microtube at room temperature. The BQD microtube is first made by selectively releasing the InGaAs/GaAs strained bilayer from GaAs substrate and then transferred on a SiO2/Si substrate using substrate-on-substrate transfer technique. Room-temperature microphotoluminescence spectrum features that six sharp and regularly spaced peaks locating in the wavelength range of 1150–1350 nm and the max Q-factor is ~ 1100 under an excitation power of 230 μW.