{"title":"Energy band gap characteristics of GaP1−xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model","authors":"D. P. Samajdar, S. Dhar","doi":"10.1109/ICECI.2014.6767363","DOIUrl":null,"url":null,"abstract":"Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Electronics, Communication and Instrumentation (ICECI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECI.2014.6767363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.
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