Pub Date : 2014-10-09DOI: 10.1109/ICECI.2014.6917606
N. Pal, Roshan Kumar, Milan S. Kumar
Autopilot's main objective is to track the desired response optimally, by considering the constraints of model. It should have faster response with overshoot within the specified limit, as well as it should have minimum steady state error for the better performance of guidance. As missile dynamics is highly nonlinear in nature, thus nonlinear controller is preferred. Nonlinear controller like dynamic inversion (DI) is used extensively due to its simplicity. However, this controller is slow, because of the use of integrator for the removal of steady state error. In this paper backstepping controller is used with different choice of lyapunov function to track the pitch dynamics of missile. Using backstepping controller with proper choice of lyapunov function makes the autopilot faster.
{"title":"Design of missile autopilot using backstepping controller","authors":"N. Pal, Roshan Kumar, Milan S. Kumar","doi":"10.1109/ICECI.2014.6917606","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6917606","url":null,"abstract":"Autopilot's main objective is to track the desired response optimally, by considering the constraints of model. It should have faster response with overshoot within the specified limit, as well as it should have minimum steady state error for the better performance of guidance. As missile dynamics is highly nonlinear in nature, thus nonlinear controller is preferred. Nonlinear controller like dynamic inversion (DI) is used extensively due to its simplicity. However, this controller is slow, because of the use of integrator for the removal of steady state error. In this paper backstepping controller is used with different choice of lyapunov function to track the pitch dynamics of missile. Using backstepping controller with proper choice of lyapunov function makes the autopilot faster.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125416072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-09DOI: 10.1109/ICECI.2014.6917605
S. Chakraborty, Deborshi Chakraborty, M. Chattopadhyay
In this paper, electrical impedance tomography (EIT), a method of imaging the interior permittivity distribution of an inhomogenity by measuring current and voltage at the surface is applied for determining the shape and position of unwanted growth within a specified area. The model, we have developed, using 8 and 16 electrode Electrical Tomography system is used to identify the presence of such objects within a particular area and can also figure out the shape of the same. Here, a regular shaped object (considered to be air) is surrounded by water is designed in 2D platform of FEM based Multiphysics software. Then a potential difference on the boundaries of the simulated model is collected with the array of gold electrodes. The data thus obtained are plotted to obtain the voltage density plots. The conductivity values of the water surrounding medium are varied and the capacitive effects across the electrode pairs are also considered. The constructed models in the software are solved with the forward solver of Electrical Impedance Tomography.
{"title":"Analysis of conductivity effects in 2D electrical tomography systems: a simulation study","authors":"S. Chakraborty, Deborshi Chakraborty, M. Chattopadhyay","doi":"10.1109/ICECI.2014.6917605","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6917605","url":null,"abstract":"In this paper, electrical impedance tomography (EIT), a method of imaging the interior permittivity distribution of an inhomogenity by measuring current and voltage at the surface is applied for determining the shape and position of unwanted growth within a specified area. The model, we have developed, using 8 and 16 electrode Electrical Tomography system is used to identify the presence of such objects within a particular area and can also figure out the shape of the same. Here, a regular shaped object (considered to be air) is surrounded by water is designed in 2D platform of FEM based Multiphysics software. Then a potential difference on the boundaries of the simulated model is collected with the array of gold electrodes. The data thus obtained are plotted to obtain the voltage density plots. The conductivity values of the water surrounding medium are varied and the capacitive effects across the electrode pairs are also considered. The constructed models in the software are solved with the forward solver of Electrical Impedance Tomography.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114489138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767381
S. B. Belamgi, S. Ray, P. Das
A suspended planar patch antenna is presented for ISM band (2.4-2.485) GHz applications. This antenna can be used for wireless energy transfer as proposed in this paper. The radiating patch of the suspended patch antenna is placed over a ground plane at a height and is fed by a coaxial probe. The dielectric medium between the radiating planar patch and the ground plane is air. Suspended planar patch antenna design equations are validated by simulated and experimental results. The radiation patterns are measured in E-plane and H-plane. The analysis is performed using Method of Moments (MOM) simulation software (Zeland- IE3D version 12.0) and the experimental results are obtained from the network analyzer and radiation measurements are done in anechoic chamber. The proposed antenna provides S11 of -45dB, gain of 9.78 dBi with radiation efficiency of 99% at 2.45GHz resonant frequency. Wireless energy transfer is verified by measuring transmitted and received power using power meter with Friis transmission equation.
{"title":"Suspended planar patch antenna for wireless energy transfer at 2.45GHz","authors":"S. B. Belamgi, S. Ray, P. Das","doi":"10.1109/ICECI.2014.6767381","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767381","url":null,"abstract":"A suspended planar patch antenna is presented for ISM band (2.4-2.485) GHz applications. This antenna can be used for wireless energy transfer as proposed in this paper. The radiating patch of the suspended patch antenna is placed over a ground plane at a height and is fed by a coaxial probe. The dielectric medium between the radiating planar patch and the ground plane is air. Suspended planar patch antenna design equations are validated by simulated and experimental results. The radiation patterns are measured in E-plane and H-plane. The analysis is performed using Method of Moments (MOM) simulation software (Zeland- IE3D version 12.0) and the experimental results are obtained from the network analyzer and radiation measurements are done in anechoic chamber. The proposed antenna provides S11 of -45dB, gain of 9.78 dBi with radiation efficiency of 99% at 2.45GHz resonant frequency. Wireless energy transfer is verified by measuring transmitted and received power using power meter with Friis transmission equation.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125186422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767378
B. Pradhan, B. Gupta
Tuneable band reject filter is a very critical component of electronic warfare. The design is of such a filter using MEMS technology presented on CPW transmission line on silicon substrate using Complementary Split Ring Resonators (CSRRs) and RF MEMS variable capacitor, enabling compatibility with planar IC technology. The CSRRs are etched on both the signal line and ground planes of the CPW. Tunability of the band reject filter is achieved by putting the MEMS bridge in either up or down state. Through electrostatic actuation of the RF-MEMS switched capacitor, the electrical characteristics of the filter is modified, so that its resonance frequency can be tuned. The rejection of stop bands are around -20.19dB for down state around the centre frequency 35.32GHz and -18.29dB for up state around the centre frequency 38.80GHz.
{"title":"RF MEMS tunable band reject filter using metamaterials","authors":"B. Pradhan, B. Gupta","doi":"10.1109/ICECI.2014.6767378","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767378","url":null,"abstract":"Tuneable band reject filter is a very critical component of electronic warfare. The design is of such a filter using MEMS technology presented on CPW transmission line on silicon substrate using Complementary Split Ring Resonators (CSRRs) and RF MEMS variable capacitor, enabling compatibility with planar IC technology. The CSRRs are etched on both the signal line and ground planes of the CPW. Tunability of the band reject filter is achieved by putting the MEMS bridge in either up or down state. Through electrostatic actuation of the RF-MEMS switched capacitor, the electrical characteristics of the filter is modified, so that its resonance frequency can be tuned. The rejection of stop bands are around -20.19dB for down state around the centre frequency 35.32GHz and -18.29dB for up state around the centre frequency 38.80GHz.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116150191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767363
D. P. Samajdar, S. Dhar
Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.
{"title":"Energy band gap characteristics of GaP1−xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model","authors":"D. P. Samajdar, S. Dhar","doi":"10.1109/ICECI.2014.6767363","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767363","url":null,"abstract":"Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134378842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767389
Amitava Halder, C. Giri, A. Halder
In this paper, we propose an efficient brain tumor detection method, which can detect tumor and locate it in the brain MRI images. This method extracts the tumor by using K-means algorithm followed by Object labeling algorithm. Also, some preprocessing steps (median filtering and morphological operation) are used for tumor detection purpose. It is observed that the experimental results of the proposed method gives better result in comparison to other techniques.
{"title":"Brain tumor detection using segmentation based Object labeling algorithm","authors":"Amitava Halder, C. Giri, A. Halder","doi":"10.1109/ICECI.2014.6767389","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767389","url":null,"abstract":"In this paper, we propose an efficient brain tumor detection method, which can detect tumor and locate it in the brain MRI images. This method extracts the tumor by using K-means algorithm followed by Object labeling algorithm. Also, some preprocessing steps (median filtering and morphological operation) are used for tumor detection purpose. It is observed that the experimental results of the proposed method gives better result in comparison to other techniques.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132690111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767370
Durba Chakraborty, A. Nag, P. Banerjee
Cognitive radios should have an inherent quality of sensing interference or the degree of interference in the operating spectrum and then an automatic capability of switching to a less interfering portion of the spectrum. The source of interference may be external or internal. The internal source is mostly the control or the peripheral circuits in the radio system. Consequently, platform noise has also to be taken into account while considering the receiver performance of radio receivers using controllers and intelligent interfacing. It, particularly, is reflected in channel dependent receiver performance. In this paper, a totally automatic technique has been described which can solve this problem by looking for that portion of the Radio frequency spectrum, where the interfering noise is less.
{"title":"Noise content based intelligent tuning of front-end of a cognitive radio receiver","authors":"Durba Chakraborty, A. Nag, P. Banerjee","doi":"10.1109/ICECI.2014.6767370","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767370","url":null,"abstract":"Cognitive radios should have an inherent quality of sensing interference or the degree of interference in the operating spectrum and then an automatic capability of switching to a less interfering portion of the spectrum. The source of interference may be external or internal. The internal source is mostly the control or the peripheral circuits in the radio system. Consequently, platform noise has also to be taken into account while considering the receiver performance of radio receivers using controllers and intelligent interfacing. It, particularly, is reflected in channel dependent receiver performance. In this paper, a totally automatic technique has been described which can solve this problem by looking for that portion of the Radio frequency spectrum, where the interfering noise is less.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114957319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767385
Debasis Roy, S. Maitra, D. De, Kasturi Mukherjee
The efficiency of the performance of Quantum Dot Cellular Automata Exclusive-OR gate in terms of the criteria of computational faithfulness for varying temperature range is studied in this paper. The cell layout of the quantum dot cellular automata three-input Exclusive-OR gate is designed. However, the environmental noise such as temperature fluctuation influences the polarizations of the cells in the circuit layout of the Exclusive-OR gate. The array of cells containing the nanostructure quantum dots forms the channel for the computation of the Exclusive-OR operation. So, this noise affects the efficacy of the logical transformation of the inputs to the output as predicted by the truth table of the Exclusive-OR gate. Shannon's information theoretic measures are applied to calculate the entropy, conditional entropy and mutual information of this noisy computational channel taking into account the variation of cell polarizations due to thermal randomness. Finally, the computational faithfulness of the Exclusive-OR gate is statistically analyzed and the fuzzy multi-valued status of the performance of the quantum-cellular automata Exclusive-OR gate is obtained in this article.
{"title":"Analysis of effect of temperature variation on computational faithfulness of a QCA XOR gate","authors":"Debasis Roy, S. Maitra, D. De, Kasturi Mukherjee","doi":"10.1109/ICECI.2014.6767385","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767385","url":null,"abstract":"The efficiency of the performance of Quantum Dot Cellular Automata Exclusive-OR gate in terms of the criteria of computational faithfulness for varying temperature range is studied in this paper. The cell layout of the quantum dot cellular automata three-input Exclusive-OR gate is designed. However, the environmental noise such as temperature fluctuation influences the polarizations of the cells in the circuit layout of the Exclusive-OR gate. The array of cells containing the nanostructure quantum dots forms the channel for the computation of the Exclusive-OR operation. So, this noise affects the efficacy of the logical transformation of the inputs to the output as predicted by the truth table of the Exclusive-OR gate. Shannon's information theoretic measures are applied to calculate the entropy, conditional entropy and mutual information of this noisy computational channel taking into account the variation of cell polarizations due to thermal randomness. Finally, the computational faithfulness of the Exclusive-OR gate is statistically analyzed and the fuzzy multi-valued status of the performance of the quantum-cellular automata Exclusive-OR gate is obtained in this article.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121932337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767375
A. Deyasi, Kasturi Mukherjee, S. Bhattacharyya
In this paper, electric field profile, normalized current density, breakdown voltage and conversion efficiency of Si/Si0.9Ge0.1 DDR IMPATT are numerically computed and results are compared with Si DDR diode for optimized input bias current. Double iterative technique is used for computational purpose which is based on simultaneous numerical solution of Poisson's equation, carrier diffusion equation and continuity equation in addition with the effect of mobile space charge. Electric field and normalized current profiles are obtained subject to the appropriate boundary conditions. Breakdown voltage and conversion efficiency are calculated for optimized input bias current density. Doping concentration is so chosen to obtain punch-through effect. Results are useful for small-signal analysis at microwave and millimeterwave frequency range.
{"title":"Performance comparison on D.C properties of heterostructure DDR IMPATT with conventional diode","authors":"A. Deyasi, Kasturi Mukherjee, S. Bhattacharyya","doi":"10.1109/ICECI.2014.6767375","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767375","url":null,"abstract":"In this paper, electric field profile, normalized current density, breakdown voltage and conversion efficiency of Si/Si0.9Ge0.1 DDR IMPATT are numerically computed and results are compared with Si DDR diode for optimized input bias current. Double iterative technique is used for computational purpose which is based on simultaneous numerical solution of Poisson's equation, carrier diffusion equation and continuity equation in addition with the effect of mobile space charge. Electric field and normalized current profiles are obtained subject to the appropriate boundary conditions. Breakdown voltage and conversion efficiency are calculated for optimized input bias current density. Doping concentration is so chosen to obtain punch-through effect. Results are useful for small-signal analysis at microwave and millimeterwave frequency range.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131837273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-03-17DOI: 10.1109/ICECI.2014.6767383
S. Sengupta, Soumya Pandit
This paper presents the analytical models for the long channel and short channel threshold voltage of Deeply Depleted Channel (DDC) MOS transistor. The model predicted results are compared with TCAD simulation results. This paper also reports the comparative study of the analog performances of the DDC MOS transistor with those of a uniformly doped transistor. The TCAD tool is calibrated with published data of DDC MOS transistor. The better immunity of the DDC MOS transistor in comparison to the conventional bulk MOS transistor is demonstrated through simulation results.
{"title":"Threshold voltage modeling of Deeply Depleted Channel MOSFET and simulation study of its analog performances","authors":"S. Sengupta, Soumya Pandit","doi":"10.1109/ICECI.2014.6767383","DOIUrl":"https://doi.org/10.1109/ICECI.2014.6767383","url":null,"abstract":"This paper presents the analytical models for the long channel and short channel threshold voltage of Deeply Depleted Channel (DDC) MOS transistor. The model predicted results are compared with TCAD simulation results. This paper also reports the comparative study of the analog performances of the DDC MOS transistor with those of a uniformly doped transistor. The TCAD tool is calibrated with published data of DDC MOS transistor. The better immunity of the DDC MOS transistor in comparison to the conventional bulk MOS transistor is demonstrated through simulation results.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116457047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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