{"title":"System for extensive characterization of MOS and SOI MOS structures by means of charge pumping","authors":"S. Szostak, L. Lukasiak, A. Jakubowski","doi":"10.1109/ICCDCS.2002.1004090","DOIUrl":null,"url":null,"abstract":"The performance of MOS devices is to a large extent determined by the quality of the Si-SiO/sub 2/ interface. This paper presents a new system for characterization of MOS and MOS SOI structures by means of charge pumping. MOSFETs and SOI MOSFETs are used as test structures.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The performance of MOS devices is to a large extent determined by the quality of the Si-SiO/sub 2/ interface. This paper presents a new system for characterization of MOS and MOS SOI structures by means of charge pumping. MOSFETs and SOI MOSFETs are used as test structures.
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