{"title":"An 8-b 2b/cycle Asynchronous SAR ADC with Capacitive Divider Based RC-DAC","authors":"Jiu Xiong, Jiajun Ren, Jin Liu","doi":"10.1109/MWSCAS.2019.8885195","DOIUrl":null,"url":null,"abstract":"This paper presents a 2b/cycle asynchronous SAR ADC with a capacitive divider based RC-DAC. The new architecture reduces the number of capacitors and resistors, leading to a smaller die area and lower hardware cost. It also allows for a new timing scheme with a merged samplingconversion cycle to increase the conversion speed. An 8-b SAR ADC with the proposed architecture is designed in 180nm CMOS technology operating at sampling rate of 65MS/s. The postlayout simulation shows the proposed SAR ADC can achieve SNDR of 45.16dB at near-Nyquist frequency and occupies an active area of 0.045mm2. The FOM under a 1.2V&1.8V supply voltage is 216fJ/conversion-step with power consumption of 2.07mW.","PeriodicalId":287815,"journal":{"name":"2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2019.8885195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents a 2b/cycle asynchronous SAR ADC with a capacitive divider based RC-DAC. The new architecture reduces the number of capacitors and resistors, leading to a smaller die area and lower hardware cost. It also allows for a new timing scheme with a merged samplingconversion cycle to increase the conversion speed. An 8-b SAR ADC with the proposed architecture is designed in 180nm CMOS technology operating at sampling rate of 65MS/s. The postlayout simulation shows the proposed SAR ADC can achieve SNDR of 45.16dB at near-Nyquist frequency and occupies an active area of 0.045mm2. The FOM under a 1.2V&1.8V supply voltage is 216fJ/conversion-step with power consumption of 2.07mW.