FREE-p: Protecting non-volatile memory against both hard and soft errors

D. Yoon, Naveen Muralimanohar, Jichuan Chang, Parthasarathy Ranganathan, N. Jouppi, M. Erez
{"title":"FREE-p: Protecting non-volatile memory against both hard and soft errors","authors":"D. Yoon, Naveen Muralimanohar, Jichuan Chang, Parthasarathy Ranganathan, N. Jouppi, M. Erez","doi":"10.1109/HPCA.2011.5749752","DOIUrl":null,"url":null,"abstract":"Emerging non-volatile memories such as phase-change RAM (PCRAM) offer significant advantages but suffer from write endurance problems. However, prior solutions are oblivious to soft errors (recently raised as a potential issue even for PCRAM) and are incompatible with high-level fault tolerance techniques such as chipkill. To additionally address such failures requires unnecessarily high costs for techniques that focus singularly on wear-out tolerance. In this paper, we propose fine-grained remapping with ECC and embedded pointers (FREE-p). FREE-p remaps fine-grained worn-out NVRAM blocks without requiring large dedicated storage. We discuss how FREE-p protects against both hard and soft errors and can be extended to chipkill. Further, FREE-p can be implemented purely in the memory controller, avoiding custom NVRAM devices. In addition to these benefits, FREE-p increases NVRAM lifetime by up to 26% over the state-of-the-art even with severe process variation while performance degradation is less than 2% for the initial 7 years.","PeriodicalId":126976,"journal":{"name":"2011 IEEE 17th International Symposium on High Performance Computer Architecture","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"182","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 17th International Symposium on High Performance Computer Architecture","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HPCA.2011.5749752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 182

Abstract

Emerging non-volatile memories such as phase-change RAM (PCRAM) offer significant advantages but suffer from write endurance problems. However, prior solutions are oblivious to soft errors (recently raised as a potential issue even for PCRAM) and are incompatible with high-level fault tolerance techniques such as chipkill. To additionally address such failures requires unnecessarily high costs for techniques that focus singularly on wear-out tolerance. In this paper, we propose fine-grained remapping with ECC and embedded pointers (FREE-p). FREE-p remaps fine-grained worn-out NVRAM blocks without requiring large dedicated storage. We discuss how FREE-p protects against both hard and soft errors and can be extended to chipkill. Further, FREE-p can be implemented purely in the memory controller, avoiding custom NVRAM devices. In addition to these benefits, FREE-p increases NVRAM lifetime by up to 26% over the state-of-the-art even with severe process variation while performance degradation is less than 2% for the initial 7 years.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
FREE-p:保护非易失性内存免受硬错误和软错误的侵害
新兴的非易失性存储器(如相变RAM (PCRAM))具有显著的优势,但存在写入持久性问题。然而,先前的解决方案忽略了软错误(最近甚至作为PCRAM的潜在问题提出),并且与高级容错技术(如chipkill)不兼容。此外,为了解决此类故障,需要为专注于磨损公差的技术提供不必要的高成本。在本文中,我们提出了使用ECC和嵌入式指针(FREE-p)的细粒度重映射。FREE-p重新映射细粒度磨损的NVRAM块,而不需要大型专用存储。我们讨论FREE-p如何防止硬错误和软错误,并可以扩展到芯片杀伤。此外,FREE-p可以完全在内存控制器中实现,避免定制NVRAM设备。除了这些优点之外,即使在严重的工艺变化下,FREE-p也将NVRAM的使用寿命提高了26%,而在最初的7年里,性能下降不到2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Safe and efficient supervised memory systems Keynote address II: How's the parallel computing revolution going? A case for guarded power gating for multi-core processors Fg-STP: Fine-Grain Single Thread Partitioning on Multicores A quantitative performance analysis model for GPU architectures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1