Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-08-18 DOI:10.1063/1.2033128
J. Hwang, Soon Sub Kim, J. Rhee, B. Chun, Il Sang You, Oh. Byung Seok, Y. K. Kim, Taewan Kim, W. Park
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引用次数: 15

Abstract

MTJs with the synthetic antiferromagnetic (SAF) free layer consisting of CoFeSiB/Ru/CoFeSiB were prepared because a SAF structure can reduce the magnetostatic coupling. Magnetic switching and tunneling magnetoresistance (TMR) ratio of MTJs were investigated by experiment and by simulation. SAF structures show lower TMR ratio and coercivity (H/sub c/) than single free layer due to low net magnetic moment. The CoFeSiB SAF structure was found to have lower exchange energy.
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非晶CoFeSiB合成反铁磁层的磁化开关和隧穿磁阻效应
利用CoFeSiB/Ru/CoFeSiB组成的合成反铁磁性(SAF)自由层，制备了具有反铁磁性(SAF)自由层的MTJs，因为SAF结构可以减少静磁耦合。通过实验和仿真研究了MTJs的磁开关和隧道磁阻(TMR)比。由于净磁矩较低，SAF结构具有较低的TMR比和矫顽力(H/sub c/)。发现CoFeSiB SAF结构具有较低的交换能。
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INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.
INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.
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