A 1.2V On-chip Output-capacitor-less Low Dropout Regulator based on Flipped Voltage Follower in 45nm CMOS Technology

Antaryami Panigrahi, Agile Mathew
{"title":"A 1.2V On-chip Output-capacitor-less Low Dropout Regulator based on Flipped Voltage Follower in 45nm CMOS Technology","authors":"Antaryami Panigrahi, Agile Mathew","doi":"10.1109/DTIS53253.2021.9525422","DOIUrl":null,"url":null,"abstract":"A low dropout regulator(LDO) based on flipped voltage follower (FVF) assisted by a voltage combiner is presented in this work. This LDO offers stable regulation over wide range of load capacitances starting from 10pF to 50nF, without depending upon on-chip or off-chip load capacitance. It also offers extended the load regulation operation from 200µA to 50mA. This enhancement is achieved by incorporating a a voltage combiner stage, small feed-forward capacitor (CF) and compensation circuitry. For improving stability, Miller’s Compensation with a nulling resistor is implemented using 75pF capacitor, 4.5kΩ resistor. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot during sharp load current transitions down to 200mV at 100pF. The designed LDO is verified with simulation in 45-nm CMOS process. For an input voltage of a 1.2V and output voltage of 1.08V, the simulated worst case undershoot and overshoot are respectively 115 mV and 74 mV, respectively, for load transient of 200µA to 50mA within edge times of 10 nSec. The quiescent current is 25uA. The simulated PSR is -42 dB over the band of 10-1kHz, -20dB at 1MHz over 200uA-50mA of load currents.","PeriodicalId":435982,"journal":{"name":"2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS53253.2021.9525422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A low dropout regulator(LDO) based on flipped voltage follower (FVF) assisted by a voltage combiner is presented in this work. This LDO offers stable regulation over wide range of load capacitances starting from 10pF to 50nF, without depending upon on-chip or off-chip load capacitance. It also offers extended the load regulation operation from 200µA to 50mA. This enhancement is achieved by incorporating a a voltage combiner stage, small feed-forward capacitor (CF) and compensation circuitry. For improving stability, Miller’s Compensation with a nulling resistor is implemented using 75pF capacitor, 4.5kΩ resistor. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot during sharp load current transitions down to 200mV at 100pF. The designed LDO is verified with simulation in 45-nm CMOS process. For an input voltage of a 1.2V and output voltage of 1.08V, the simulated worst case undershoot and overshoot are respectively 115 mV and 74 mV, respectively, for load transient of 200µA to 50mA within edge times of 10 nSec. The quiescent current is 25uA. The simulated PSR is -42 dB over the band of 10-1kHz, -20dB at 1MHz over 200uA-50mA of load currents.
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基于45nm CMOS技术翻转电压跟随器的1.2V片上无输出差稳压器
提出了一种基于翻转电压从动器(FVF)并辅以电压合成器的低差稳压器(LDO)。该LDO在从10pF到50nF的宽负载电容范围内提供稳定的调节,而不依赖于片内或片外负载电容。它还提供扩展负载调节操作从200µA到50mA。这种增强是通过结合电压组合级,小型前馈电容器(CF)和补偿电路来实现的。为了提高稳定性,米勒补偿与零电阻是实现使用75pF电容器,4.5kΩ电阻。此外,还采用了一个压转率增强电路,将负载电流急剧转换时的电压欠冲降低到100pF时的200mV。设计的LDO在45纳米CMOS工艺中进行了仿真验证。当输入电压为1.2V,输出电压为1.08V时,在200µa ~ 50mA的负载暂态边缘时间为10 nSec的情况下,模拟的最坏欠调和过调分别为115 mV和74 mV。静态电流为25uA。仿真的PSR在10-1kHz频段为-42 dB,在200uA-50mA负载电流下,在1MHz频段为-20dB。
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