{"title":"Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics","authors":"H. Xiong, J. Suehle","doi":"10.1109/IRWS.2006.305222","DOIUrl":null,"url":null,"abstract":"Low frequency (LF) noise is studied in n-type metal-oxide-semiconductor field-effect-transistors (nMOSFETs) with various HfO2 or interfacial layer (IL) thicknesses and is found to be dominated by 1/f noise in the frequency range 1 Hz lesfles 1.6 kHz. LF noise magnitude increases with HfO2 thickness and decreases with IL SiO2 thickness. Traps at the channel and dielectric interface do not contribute to the 1/f noise or cannot be resolved from thermal noise. The LF noise correlates well with the hysteresis or Vth instability observed during DC measurements. The volume trap density calculated from 1/f noise analysis is more than one order of magnitude higher in 7 nm HfO2 than in 3 nm HfO2 devices. Qualitative trap spatial profiles can be obtained from the LF spectra, and the stress induced redistribution of trap distribution is discussed","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Low frequency (LF) noise is studied in n-type metal-oxide-semiconductor field-effect-transistors (nMOSFETs) with various HfO2 or interfacial layer (IL) thicknesses and is found to be dominated by 1/f noise in the frequency range 1 Hz lesfles 1.6 kHz. LF noise magnitude increases with HfO2 thickness and decreases with IL SiO2 thickness. Traps at the channel and dielectric interface do not contribute to the 1/f noise or cannot be resolved from thermal noise. The LF noise correlates well with the hysteresis or Vth instability observed during DC measurements. The volume trap density calculated from 1/f noise analysis is more than one order of magnitude higher in 7 nm HfO2 than in 3 nm HfO2 devices. Qualitative trap spatial profiles can be obtained from the LF spectra, and the stress induced redistribution of trap distribution is discussed
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