{"title":"Temperature Stability and Reliability Aspects of 77 GHz Voltage Controlled Oscillators in a SiGe:C BiCMOS Technology","authors":"G. Fischer, S. Glisic","doi":"10.1109/SMIC.2008.49","DOIUrl":null,"url":null,"abstract":"The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125degC we get a low oscillation frequency shift Deltafosc = -1.2 GHz/100 K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.49","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125degC we get a low oscillation frequency shift Deltafosc = -1.2 GHz/100 K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.
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