MDmesh/sup TM/: innovative technology for high voltage Power MOSFETs

Abstract

A new PowerMOSFET device, called MDmesh/sup TM/ (Multiple Drain mesh), that joins the best performance in the Power management market either in static and dynamic behavior is presented. A strong reduction in the silicon conduction losses per area allowed a valuable resize of the device area and a reduction of the used package volume. Moreover, a valuable reduction in device internal capacitance and gate charge has been observed and an optimized switching behavior has been obtained. A deep look inside the device performances will be presented and the main device features will be compared with the ones of a device having the same conduction losses fabricated with a standard technology.