{"title":"Analysis of the forward biased safe operating area of the super junction MOSFET","authors":"B. Zhang, Z. Xu, A.Q. Huang","doi":"10.1109/ISPSD.2000.856773","DOIUrl":null,"url":null,"abstract":"In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
