{"title":"High resolution body bias techniques for reducing the impacts of leakage current and parasitic bipolar","authors":"M. Sumita","doi":"10.1145/1077603.1077653","DOIUrl":null,"url":null,"abstract":"With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.","PeriodicalId":256018,"journal":{"name":"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1077603.1077653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.