Jianbing Cheng, Bo Zhang, Zhaoji Li, Yufeng Guo, Shu Yu
{"title":"Multi-reversed-junction LDMOST with very high breakdown voltage per unit length","authors":"Jianbing Cheng, Bo Zhang, Zhaoji Li, Yufeng Guo, Shu Yu","doi":"10.1109/IWJT.2010.5475004","DOIUrl":null,"url":null,"abstract":"A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried out. Simulation results show that the breakdown voltage per unit length of the presented device is increased from 7V/μm of the conventional power MOSFET to 16.3V/μm with nearly same drift region and substrate parameters.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5475004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried out. Simulation results show that the breakdown voltage per unit length of the presented device is increased from 7V/μm of the conventional power MOSFET to 16.3V/μm with nearly same drift region and substrate parameters.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
