{"title":"“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications","authors":"D. Lie","doi":"10.1155/2010/380108","DOIUrl":null,"url":null,"abstract":"RFIC integration has seen dramatic progress since the early 1990s. For example, Si-based single-chip products for GSM, WLAN, Bluetooth, and DECT applications have become commercially available. However, RF power amplifiers (PAs) and switches tend to remain off-chip in the context of single-chip CMOS/BiCMOS transceiver ICs for handset applications. More recently, several WLAN/Bluetooth vendors have successfully integrated less demanding PAs onto the transceivers. This paper will focus on single-chip RF-system-on-a-chip (i.e., “RF-SoC”) implementations that include a high-power PA. An analysis of all tradeoffs inherent to integrating higher power PAs is provided. The analysis includes the development cost, time-to-market, power efficiency, yield, reliability, and performance issues. Recent design trends on highly integrated CMOS WiFi transceivers in the literature will be briefly reviewed with emphasis on the RF-SoC product design tradeoffs impacted by the choice between integrated versus external PAs.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2010/380108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
RFIC integration has seen dramatic progress since the early 1990s. For example, Si-based single-chip products for GSM, WLAN, Bluetooth, and DECT applications have become commercially available. However, RF power amplifiers (PAs) and switches tend to remain off-chip in the context of single-chip CMOS/BiCMOS transceiver ICs for handset applications. More recently, several WLAN/Bluetooth vendors have successfully integrated less demanding PAs onto the transceivers. This paper will focus on single-chip RF-system-on-a-chip (i.e., “RF-SoC”) implementations that include a high-power PA. An analysis of all tradeoffs inherent to integrating higher power PAs is provided. The analysis includes the development cost, time-to-market, power efficiency, yield, reliability, and performance issues. Recent design trends on highly integrated CMOS WiFi transceivers in the literature will be briefly reviewed with emphasis on the RF-SoC product design tradeoffs impacted by the choice between integrated versus external PAs.