Simulation and analysis of magnetic field strength with magneto-resistive sensor: A future application

Sangharatna M. Ramteke, H. Chelladurai, K. Pandian
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引用次数: 1

Abstract

The optimum orientation of four bar magnets to give an effective magnetic field strength with magneto-resistive (MR) sensor is proposed in this paper. The bar magnets having the same magnetic field strength of 4.51 kA/m are used and placed at a nominal distance from the MR sensor to get the maximum magnetic field strength and sensor voltage. The magnetic orientation and it's field strength is simulated and analyzed through Comsol Software and validated with the laboratory experimental results. The experimental result shows that the SSNN orientation at a distance of 0.5 cm from MR sensor comparatively gives higher magnetic field strength and sensor output voltage.
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磁阻传感器磁场强度模拟与分析:未来应用
本文提出了四棒磁体的最佳位置,使磁阻传感器具有有效的磁场强度。使用具有相同磁场强度为4.51 kA/m的条形磁铁,并将其放置在距离MR传感器的标称距离处,以获得最大磁场强度和传感器电压。利用Comsol软件对磁取向和磁场强度进行了仿真分析,并用实验室实验结果进行了验证。实验结果表明,在距离MR传感器0.5 cm处的SSNN取向相对而言具有更高的磁场强度和传感器输出电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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