Two high-pressure superconducting phases in pressurized optical semiconductor GaP

IF 8.6 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Npg Asia Materials Pub Date : 2023-11-10 DOI:10.1038/s41427-023-00506-8
Nixian Qian, Chunhua Chen, Yonghui Zhou, Shuyang Wang, Liangyu Li, Ranran Zhang, Xiangde Zhu, Yifang Yuan, Xuliang Chen, Chao An, Ying Zhou, Min Zhang, Xiaoping Yang, Zhaorong Yang
{"title":"Two high-pressure superconducting phases in pressurized optical semiconductor GaP","authors":"Nixian Qian, Chunhua Chen, Yonghui Zhou, Shuyang Wang, Liangyu Li, Ranran Zhang, Xiangde Zhu, Yifang Yuan, Xuliang Chen, Chao An, Ying Zhou, Min Zhang, Xiaoping Yang, Zhaorong Yang","doi":"10.1038/s41427-023-00506-8","DOIUrl":null,"url":null,"abstract":"Abstract Pressure engineering in semiconductors leads to a variety of novel physical phenomena and has recently received considerable attention. Here, we report on pressure-induced superconductivity in III–V gallium phosphide (GaP), a commercially important semiconductor that exhibits excellent optical performance. We show that the emergence of superconductivity is accompanied by the concurrence of piezochromic transition and metallization and can be correlated to a structural transition from the cubic to orthorhombic phase. In line with the structural origin of superconductivity, the critical temperature T c monotonically decreases with increasing pressure up to ~50 GPa. Moreover, the superconductivity could be preserved toward ambient pressure because of the irreversibility of the structural transition. Nevertheless, the superconducting transition displays evident broadening associated with the presence of amorphization in the depressurized sample. The synchronous evolution of the structural and electronic properties not only shows a vivid structure-property relationship but also could facilitate the exploration of novel functionalities by means of pressure treatment.","PeriodicalId":19382,"journal":{"name":"Npg Asia Materials","volume":"16 6","pages":"0"},"PeriodicalIF":8.6000,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Npg Asia Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1038/s41427-023-00506-8","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Abstract Pressure engineering in semiconductors leads to a variety of novel physical phenomena and has recently received considerable attention. Here, we report on pressure-induced superconductivity in III–V gallium phosphide (GaP), a commercially important semiconductor that exhibits excellent optical performance. We show that the emergence of superconductivity is accompanied by the concurrence of piezochromic transition and metallization and can be correlated to a structural transition from the cubic to orthorhombic phase. In line with the structural origin of superconductivity, the critical temperature T c monotonically decreases with increasing pressure up to ~50 GPa. Moreover, the superconductivity could be preserved toward ambient pressure because of the irreversibility of the structural transition. Nevertheless, the superconducting transition displays evident broadening associated with the presence of amorphization in the depressurized sample. The synchronous evolution of the structural and electronic properties not only shows a vivid structure-property relationship but also could facilitate the exploration of novel functionalities by means of pressure treatment.

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加压光学半导体GaP中的两个高压超导相
半导体领域的压力工程引发了一系列新的物理现象,近年来受到了广泛的关注。在这里,我们报告了III-V磷化镓(GaP)的压力诱导超导性,这是一种具有优异光学性能的重要商业半导体。我们发现超导性的出现伴随着压致变色转变和金属化的同时发生,并且可以与从立方相到正交相的结构转变相关。临界温度随压力的增加而单调降低,直至~50 GPa,这与超导性的结构起源一致。此外,由于结构转变的不可逆性,超导性可以在环境压力下保持。然而,在减压样品中,由于非晶化的存在,超导转变显示出明显的展宽。结构性能和电子性能的同步演变不仅显示了一种生动的结构-性能关系,而且可以通过压力处理促进新功能的探索。
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来源期刊
Npg Asia Materials
Npg Asia Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
15.40
自引率
1.00%
发文量
87
审稿时长
2 months
期刊介绍: NPG Asia Materials is an open access, international journal that publishes peer-reviewed review and primary research articles in the field of materials sciences. The journal has a global outlook and reach, with a base in the Asia-Pacific region to reflect the significant and growing output of materials research from this area. The target audience for NPG Asia Materials is scientists and researchers involved in materials research, covering a wide range of disciplines including physical and chemical sciences, biotechnology, and nanotechnology. The journal particularly welcomes high-quality articles from rapidly advancing areas that bridge the gap between materials science and engineering, as well as the classical disciplines of physics, chemistry, and biology. NPG Asia Materials is abstracted/indexed in Journal Citation Reports/Science Edition Web of Knowledge, Google Scholar, Chemical Abstract Services, Scopus, Ulrichsweb (ProQuest), and Scirus.
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