{"title":"Magnetoresistance ratio in magnetic tunnel junction with silicon diffused MgO barrier","authors":"Tatsuki Watanabe, Minori Goto, Yuichiro Ando, Tsubasa Watakabe, Hikaru NOMURA, Yoshishige SUZUKI","doi":"10.35848/1882-0786/ad0ba1","DOIUrl":null,"url":null,"abstract":"Abstract We demonstrated a magnetic tunnel junction (MTJ) consisting of Fe/MgO-Si-MgO/Fe. Si layer was deposited at room temperature and at 700 ℃; when deposited at 700 ℃, Si diffused into the MgO layer. The MTJ with silicon deposited at 700 ℃ attained high MR ratios of up to 38.7 and 2.9% at t Si = 0.19 and 1.3 nm, respectively. Low-temperature measurements established that the temperature dependence of the MR ratio and resistance between MTJs with and without diffused silicon are significantly different. This behavior confirms that the Si-MgO channel acts as an impurity semiconductor in the MTJ.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"76 26","pages":"0"},"PeriodicalIF":2.3000,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad0ba1","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Abstract We demonstrated a magnetic tunnel junction (MTJ) consisting of Fe/MgO-Si-MgO/Fe. Si layer was deposited at room temperature and at 700 ℃; when deposited at 700 ℃, Si diffused into the MgO layer. The MTJ with silicon deposited at 700 ℃ attained high MR ratios of up to 38.7 and 2.9% at t Si = 0.19 and 1.3 nm, respectively. Low-temperature measurements established that the temperature dependence of the MR ratio and resistance between MTJs with and without diffused silicon are significantly different. This behavior confirms that the Si-MgO channel acts as an impurity semiconductor in the MTJ.
摘要:我们展示了一种由Fe/MgO-Si-MgO/Fe组成的磁性隧道结(MTJ)。在室温和700℃下沉积Si层;在700℃沉积时，Si扩散到MgO层中。在700℃沉积硅的MTJ在t Si = 0.19和1.3 nm处的MR比分别高达38.7和2.9%。低温测量表明，含扩散硅和不含扩散硅的MTJs的磁流变比和电阻对温度的依赖性有显著差异。这种行为证实了Si-MgO通道在MTJ中作为杂质半导体。
期刊介绍：
Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
