In this paper, we present the application of THz frequency-domain spectroscopy (THz-FDS) for determining the refractive index in an ambient environment. The signal phase is extracted from the periodically oscillated photocurrent by a magnitude normalization method. The proposed method is demonstrated using experimental data of polytetrafluoroethylene and α-lactose monohydrate as reference materials collected at a relative humidity of around 17.0% ± 2.0%. A detailed comparison to the existing algorithms, including the Hilbert transform and extreme points analysis, reveals the remarkable reliability of our proposed method. This study expands the characterization capabilities of THz-FDS and furthers the development of practical terahertz spectroscopy applications.
{"title":"Precise measurement of refractive index in the ambient environment using continuous-wave terahertz frequency-domain spectroscopy (THz-FDS)","authors":"Tian-yao Zhang, Boyang Li, Yuansha Yuan, Yanhui Jiao, Jianfeng Yan, Xuan Zhao, Xiaoyan Zhao, Zhaohui Zhang","doi":"10.35848/1882-0786/acf7ab","DOIUrl":"https://doi.org/10.35848/1882-0786/acf7ab","url":null,"abstract":"In this paper, we present the application of THz frequency-domain spectroscopy (THz-FDS) for determining the refractive index in an ambient environment. The signal phase is extracted from the periodically oscillated photocurrent by a magnitude normalization method. The proposed method is demonstrated using experimental data of polytetrafluoroethylene and α-lactose monohydrate as reference materials collected at a relative humidity of around 17.0% ± 2.0%. A detailed comparison to the existing algorithms, including the Hilbert transform and extreme points analysis, reveals the remarkable reliability of our proposed method. This study expands the characterization capabilities of THz-FDS and furthers the development of practical terahertz spectroscopy applications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"16 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70069560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.35848/1882-0786/acf7a9
Y. Takeda, Y. Tsuchiya, Gen Nishijima
A low circuit resistance is required for a superconducting magnet operated in persistent mode using superconducting joints. We performed current decay measurements on a high-temperature superconducting (HTS) closed loop with a superconducting joint to evaluate the time dependence of the current and resistance. The results have been quantitatively explained by considering current sharing and flux creep. After the elapse of 105 s, current sharing was suppressed and a circuit resistance of less than 10−13 Ω was observed. The main finding is that joint resistance of an HTS closed loop is inversely proportional to time, contributing to low circuit resistance.
{"title":"Interpretation of time-dependent current and resistance of HTS closed loop with superconducting joint considering flux creep","authors":"Y. Takeda, Y. Tsuchiya, Gen Nishijima","doi":"10.35848/1882-0786/acf7a9","DOIUrl":"https://doi.org/10.35848/1882-0786/acf7a9","url":null,"abstract":"A low circuit resistance is required for a superconducting magnet operated in persistent mode using superconducting joints. We performed current decay measurements on a high-temperature superconducting (HTS) closed loop with a superconducting joint to evaluate the time dependence of the current and resistance. The results have been quantitatively explained by considering current sharing and flux creep. After the elapse of 105 s, current sharing was suppressed and a circuit resistance of less than 10−13 Ω was observed. The main finding is that joint resistance of an HTS closed loop is inversely proportional to time, contributing to low circuit resistance.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48591411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.35848/1882-0786/acf7ac
Xin Li, Wen Xiong
Based on the 16-band effective-mass theory, the band structures and optical gain of GaAs1−x−y N x Bi y nanowires under [100] direction uniaxial stress are investigated. Our calculations indicate, as the increase of stress, the first gain peak position can be redshifted to optical communication band even though nitrogen and bismuth contents are less than 0.05, and we almost obtain pure optical gain along z-direction due to the strong inhibition of optical gain along x-direction. Moreover, GaAs1−x−y N x Bi y nanowires with high nitrogen contents and large diameters are apt to be adjusted to 1310–1550 nm under the proper stress.
基于16波段有效质量理论，研究了GaAs1−x−y N x Bi y纳米线在[100]方向单轴应力作用下的能带结构和光学增益。我们的计算表明，随着应力的增加，即使氮和铋含量小于0.05，第一个增益峰值位置也可以红移到光通信波段，并且由于沿x方向的光增益有很强的抑制作用，我们几乎可以获得沿z方向的纯光增益。此外，高氮含量和大直径的GaAs1−x−y N x Bi y纳米线在适当的应力下易于调整到1310 ~ 1550 nm。
{"title":"The optical gain of GaAs1−x−y N x Bi y nanowires under the [100] direction uniaxial stress","authors":"Xin Li, Wen Xiong","doi":"10.35848/1882-0786/acf7ac","DOIUrl":"https://doi.org/10.35848/1882-0786/acf7ac","url":null,"abstract":"Based on the 16-band effective-mass theory, the band structures and optical gain of GaAs1−x−y N x Bi y nanowires under [100] direction uniaxial stress are investigated. Our calculations indicate, as the increase of stress, the first gain peak position can be redshifted to optical communication band even though nitrogen and bismuth contents are less than 0.05, and we almost obtain pure optical gain along z-direction due to the strong inhibition of optical gain along x-direction. Moreover, GaAs1−x−y N x Bi y nanowires with high nitrogen contents and large diameters are apt to be adjusted to 1310–1550 nm under the proper stress.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42139663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-05DOI: 10.35848/1882-0786/acf6f1
Sabina Kang, Kai Aburada, J. Hanna, H. Iino
We have investigated organic field effect transistors (OFETs) fabricated with liquid crystalline organic semiconductor, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), and silver (Ag) source-drain electrodes. Ph-BTBT-10 OFETs using Ag source-drain electrodes in bottom-gate top-contact configuration exhibit high mobility of 8.2 cm2 Vs−1, which is similar to those of gold (Au) electrodes. Contact resistance of Ph-BTBT-10 OFETs using Ag electrodes achieved 0.49 kΩcm by transfer length method, which is lower than those of Au electrodes, 2.7 kΩcm. Ph-BTBT-10 OFET using Ag source-drain electrodes in bottom-gate top-contact configuration is a promising candidate for high-performance and low-cost OFETs.
{"title":"High-performance organic field effect transistor of liquid crystalline organic semiconductor using silver electrodes with bottom-gate top-contact configuration","authors":"Sabina Kang, Kai Aburada, J. Hanna, H. Iino","doi":"10.35848/1882-0786/acf6f1","DOIUrl":"https://doi.org/10.35848/1882-0786/acf6f1","url":null,"abstract":"We have investigated organic field effect transistors (OFETs) fabricated with liquid crystalline organic semiconductor, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), and silver (Ag) source-drain electrodes. Ph-BTBT-10 OFETs using Ag source-drain electrodes in bottom-gate top-contact configuration exhibit high mobility of 8.2 cm2 Vs−1, which is similar to those of gold (Au) electrodes. Contact resistance of Ph-BTBT-10 OFETs using Ag electrodes achieved 0.49 kΩcm by transfer length method, which is lower than those of Au electrodes, 2.7 kΩcm. Ph-BTBT-10 OFET using Ag source-drain electrodes in bottom-gate top-contact configuration is a promising candidate for high-performance and low-cost OFETs.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44713999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-04DOI: 10.35848/1882-0786/acf6a8
Hiroki Yagi, Takashi Yagi, Yuichiro Yamashita, Makoto Kashiwagi, J. Jia, Yuki Oguchi, N. Taketoshi, Y. Shigesato
To investigate the thermal-switching properties of Pd-catalyzed Ni–Mg alloy films, we conducted in situ analyses of the films’ electrical, optical, and thermal properties through hydrogen gasochromic reactions. These reactions allow the films to reversibly switch between metallic (dehydride) and semiconductor (hydride) phases. The thermal conductivities of the metallic and semiconductor states were found to be 14 and 1.0 W m−1 K−1, respectively. By applying the Wiedemann–Franz law, we attributed the significant decrease in thermal conductivity during hydrogenation to the reduction in free electrons.
为了研究Pd催化的Ni–Mg合金薄膜的热开关性能，我们通过氢气-气相变色反应对薄膜的电学、光学和热学性能进行了原位分析。这些反应允许薄膜在金属（脱氢化物）和半导体（氢化物）相之间可逆地切换。金属态和半导体态的热导率分别为14和1.0 W m−1 K−1。通过应用Wiedemann–Franz定律，我们将氢化过程中热导率的显著降低归因于自由电子的减少。
{"title":"Cyclic thermal conductivity changes of Pd-catalyzed Ni–Mg alloy films by gasochromic hydro- and dehydrogenations","authors":"Hiroki Yagi, Takashi Yagi, Yuichiro Yamashita, Makoto Kashiwagi, J. Jia, Yuki Oguchi, N. Taketoshi, Y. Shigesato","doi":"10.35848/1882-0786/acf6a8","DOIUrl":"https://doi.org/10.35848/1882-0786/acf6a8","url":null,"abstract":"To investigate the thermal-switching properties of Pd-catalyzed Ni–Mg alloy films, we conducted in situ analyses of the films’ electrical, optical, and thermal properties through hydrogen gasochromic reactions. These reactions allow the films to reversibly switch between metallic (dehydride) and semiconductor (hydride) phases. The thermal conductivities of the metallic and semiconductor states were found to be 14 and 1.0 W m−1 K−1, respectively. By applying the Wiedemann–Franz law, we attributed the significant decrease in thermal conductivity during hydrogenation to the reduction in free electrons.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47572593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.35848/1882-0786/acf644
Ryota Ochi, Takuya Togashi, Yoshito Osawa, F. Horikiri, H. Fujikura, Kazunari Fujikawa, Takashi Furuya, Ryota Isono, M. Akazawa, Taketomo Sato
To investigate how the electrical properties of AlGaN/GaN HEMTs are dominated by the near-surface region, transmission line method and X-ray photoelectron spectroscopy (XPS) measurements were conducted on three samples. There was one sample with poor ohmic properties. The XPS results indicate that the surface-Fermi-level, E FS, position of the poor-ohmic sample was deeper than the others. When a 5 nm thick surface layer was removed by contactless photo-electrochemical etching, E FS shifted to the same position as the others and the contact resistance improved. These results indicate that the control of the near-surface region of AlGaN can be a dominant factor changing the E FS position, which greatly affects the ohmic properties.
{"title":"Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques","authors":"Ryota Ochi, Takuya Togashi, Yoshito Osawa, F. Horikiri, H. Fujikura, Kazunari Fujikawa, Takashi Furuya, Ryota Isono, M. Akazawa, Taketomo Sato","doi":"10.35848/1882-0786/acf644","DOIUrl":"https://doi.org/10.35848/1882-0786/acf644","url":null,"abstract":"To investigate how the electrical properties of AlGaN/GaN HEMTs are dominated by the near-surface region, transmission line method and X-ray photoelectron spectroscopy (XPS) measurements were conducted on three samples. There was one sample with poor ohmic properties. The XPS results indicate that the surface-Fermi-level, E FS, position of the poor-ohmic sample was deeper than the others. When a 5 nm thick surface layer was removed by contactless photo-electrochemical etching, E FS shifted to the same position as the others and the contact resistance improved. These results indicate that the control of the near-surface region of AlGaN can be a dominant factor changing the E FS position, which greatly affects the ohmic properties.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45062868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.35848/1882-0786/acf645
K. Uchida, Tetsuya Kuwabara, Toru Tanji, Makoto Fujimoto, Ren Nagasawa, R. Iguchi
Thermoelectric generation using the anomalous Nernst effect (ANE) is demonstrated in multilayer-laminated coils comprising ferromagnetic metal wires stacked in the radial direction. By applying a temperature gradient to the coils in the radial direction, the thermoelectric voltage and power induced by the ANE appear and increase in proportion to the number of stacked layers. This device structure is useful for improving the thermoelectric performance and versatility of energy-harvesting devices based on the ANE.
{"title":"Anomalous Nernst thermoelectric generation in multilayer-laminated coiled magnetic wires","authors":"K. Uchida, Tetsuya Kuwabara, Toru Tanji, Makoto Fujimoto, Ren Nagasawa, R. Iguchi","doi":"10.35848/1882-0786/acf645","DOIUrl":"https://doi.org/10.35848/1882-0786/acf645","url":null,"abstract":"Thermoelectric generation using the anomalous Nernst effect (ANE) is demonstrated in multilayer-laminated coils comprising ferromagnetic metal wires stacked in the radial direction. By applying a temperature gradient to the coils in the radial direction, the thermoelectric voltage and power induced by the ANE appear and increase in proportion to the number of stacked layers. This device structure is useful for improving the thermoelectric performance and versatility of energy-harvesting devices based on the ANE.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45043203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-31DOI: 10.35848/1882-0786/acf5c8
Jo Okada, Hajime Tanaka, N. Mori
A numerical calculation method is proposed to compute the transport mean free path of single-mode semiconductor nanosheets with surface roughness, where the mean free path is extracted from the statistical average of the logarithm of the dimensionless resistance. The present method requires only a computationally less demanding coherent transmission probability, and is applicable to wider channel length ranges from the quasi-ballistic to the localization regime. The channel thickness, T w, dependence of the mean free path calculated by the proposed method within the effective mass approximation shows the well-known T W 6 dependence for thicker T w, while it becomes weaker for thinner T w.
提出了一种计算具有表面粗糙度的单模半导体纳米片传输平均自由程的数值计算方法，其中平均自由程是从无量纲电阻对数的统计平均值中提取的。本方法只需要计算上要求较低的相干传输概率，并且适用于从准弹道到定位系统的较宽信道长度范围。在有效质量近似范围内，通过所提出的方法计算的平均自由程的通道厚度T w依赖性显示了众所周知的T w 6对较厚T w的依赖性，而对较薄T w则变得较弱。
{"title":"Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness","authors":"Jo Okada, Hajime Tanaka, N. Mori","doi":"10.35848/1882-0786/acf5c8","DOIUrl":"https://doi.org/10.35848/1882-0786/acf5c8","url":null,"abstract":"A numerical calculation method is proposed to compute the transport mean free path of single-mode semiconductor nanosheets with surface roughness, where the mean free path is extracted from the statistical average of the logarithm of the dimensionless resistance. The present method requires only a computationally less demanding coherent transmission probability, and is applicable to wider channel length ranges from the quasi-ballistic to the localization regime. The channel thickness, T w, dependence of the mean free path calculated by the proposed method within the effective mass approximation shows the well-known T W 6 dependence for thicker T w, while it becomes weaker for thinner T w.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45137842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-29DOI: 10.35848/1882-0786/acf4df
N. Tanaka, M. Kuniyoshi, K. Abe, Masaki Hoshihara, Takuma Kobayashi, T. Shimura, Heiji Watanabe
Epitaxial growth of high-quality low tin content germanium (GeSn) alloy is demonstrated by sputter deposition. Adding several percent of Sn during simultaneous sputter deposition significantly improved the crystallographic structure of the GeSn alloy, leading to intense photoluminescence even at room temperature. Dislocation-free single-crystal GeSn films were formed on a Ge(100) substrate under tuned growth conditions, that is, an Sn/Ge flux ratio of 6.2% and deposition temperature of 500 °C, in which compositional gradation of the Sn content in the film thickness direction spontaneously formed. The growth mechanisms are discussed based on growth kinetics and Sn diffusion on the growing surface.
{"title":"Impact of Sn incorporation on sputter epitaxy of GeSn","authors":"N. Tanaka, M. Kuniyoshi, K. Abe, Masaki Hoshihara, Takuma Kobayashi, T. Shimura, Heiji Watanabe","doi":"10.35848/1882-0786/acf4df","DOIUrl":"https://doi.org/10.35848/1882-0786/acf4df","url":null,"abstract":"Epitaxial growth of high-quality low tin content germanium (GeSn) alloy is demonstrated by sputter deposition. Adding several percent of Sn during simultaneous sputter deposition significantly improved the crystallographic structure of the GeSn alloy, leading to intense photoluminescence even at room temperature. Dislocation-free single-crystal GeSn films were formed on a Ge(100) substrate under tuned growth conditions, that is, an Sn/Ge flux ratio of 6.2% and deposition temperature of 500 °C, in which compositional gradation of the Sn content in the film thickness direction spontaneously formed. The growth mechanisms are discussed based on growth kinetics and Sn diffusion on the growing surface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47924754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-28DOI: 10.35848/1882-0786/acf487
Zhikai Li, T. Fujimori, Samuel Jeong, Hirotaka Inoue, Momoko Sakai, Keishi Akada, Yoshikazu Ito, J. Fujita
The precise control of substitutional nitrogen (N) doping into a carbon nanotube (CNT) lattice is key to tuning their unique one-dimensional electronic properties. Here we report a direct synthesis of high-quality N-doped single-wall CNTs (N-SWCNTs) with ∼1 nm in diameter using a floating-catalyst chemical vapor deposition under a high flow rate of hydrogen as a carrier gas. The high hydrogen flow rate enhances the total N content in the CNT lattice. The N-SWCNTs exhibit an n-type doping behavior induced by enriched graphitic-N as confirmed by Raman analysis. Our finding will be beneficial to tailoring the doping state of N-SWCNTs.
{"title":"Direct synthesis of nitrogen-doped narrow-diameter carbon nanotubes through floating-catalyst chemical vapor deposition with high hydrogen flow rate","authors":"Zhikai Li, T. Fujimori, Samuel Jeong, Hirotaka Inoue, Momoko Sakai, Keishi Akada, Yoshikazu Ito, J. Fujita","doi":"10.35848/1882-0786/acf487","DOIUrl":"https://doi.org/10.35848/1882-0786/acf487","url":null,"abstract":"The precise control of substitutional nitrogen (N) doping into a carbon nanotube (CNT) lattice is key to tuning their unique one-dimensional electronic properties. Here we report a direct synthesis of high-quality N-doped single-wall CNTs (N-SWCNTs) with ∼1 nm in diameter using a floating-catalyst chemical vapor deposition under a high flow rate of hydrogen as a carrier gas. The high hydrogen flow rate enhances the total N content in the CNT lattice. The N-SWCNTs exhibit an n-type doping behavior induced by enriched graphitic-N as confirmed by Raman analysis. Our finding will be beneficial to tailoring the doping state of N-SWCNTs.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42023895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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