Atomic Structures and Chemical states of active and inactive dopants in GaN

Yoshiyuki Yamashita, Jingmin Tang, Yusuke Hashimote, Tomohiro Matsushita
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Abstract

We investigated atomic structures and chemical states of active and inactive dopant sites for Mg- and Si- doped in GaN using photoelectron holography and X-ray absorption near edge structure. In the case of Mg-doped GaN, we found that a Mg atom substituting a Ga atom (Mg Ga ) is an active dopant site in GaN whereas Mg Ga with two H atoms is an inactive dopant site in GaN. We found that a Si atom substituting a Ga atom is an active dopant site in Si-doped GaN whereas Si 3 N 4 is an inactive dopant site in GaN.
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氮化镓中活性和非活性掺杂剂的原子结构和化学状态
我们利用光电子全息和x射线吸收近边结构研究了氮化镓中镁和硅掺杂活性和非活性位点的原子结构和化学状态。在Mg掺杂GaN的情况下,我们发现一个Mg原子取代一个Ga原子(Mg Ga)在GaN中是一个活性掺杂位点,而两个H原子的Mg Ga在GaN中是一个非活性掺杂位点。我们发现,Si原子取代Ga原子是Si掺杂GaN的活性掺杂位点,而si3n4是GaN的非活性掺杂位点。
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