Formation of Periodic Surface Structures on Semiconductors under Mid-Infrared Free-Electron Laser Irradiation

Shin-ichiro Masuno, Masaki Hashida, Heishun Zen
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Abstract

In understanding the formation mechanism of laser-induced periodic surface structures (LIPSS), the dependence of the LIPSS formation threshold fluence F// on the material properties is crucial. In this work, the LIPSS generated upon the irradiation of various semiconductor materials with a train of 11.4 µm femtosecond laser pulses were examined. The laser source was a Mid-infrared free-electron laser (MIR-FEL). Eight semiconductor substrates (i.e., Si, Ge, ZnO, SiC-4H, GaP, GaN, CdTe, and SiO2) were used as the targets. On Si, Ge, SiC-4H, and GaN, the LIPSS were oriented parallel to the MIR-FEL polarization with interspaces of 1/8 to 1/4 of the MIR-FEL wavelength λFEL. These interspaces tended to match the wavelength of the second harmonic of the MIR-FEL light propagating in the substrates. The obtained F// were relatively correlated with the bandgap energies of materials, as were those for near-infrared femtosecond lasers. Another type of LIPSS oriented perpendicular to the MIR-FEL polarization with interspaces of λFEL to λFEL/9 was also observed in the same spot on SiC-4H or GaN at higher fluences than only //-LIPSS was formed.
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中红外自由电子激光照射下半导体周期性表面结构的形成
为了理解激光诱导周期性表面结构(LIPSS)的形成机制,LIPSS形成阈值F//对材料性能的依赖性至关重要。在这项工作中,研究了用11.4µm飞秒激光脉冲照射各种半导体材料所产生的LIPSS。激光源为中红外自由电子激光器(MIR-FEL)。8种半导体衬底(即Si、Ge、ZnO、SiC-4H、GaP、GaN、CdTe和SiO2)被用作靶材。在Si, Ge, SiC-4H和GaN上,LIPSS平行于MIR-FEL偏振方向,间距为MIR-FEL波长λFEL的1/8至1/4。这些间隙倾向于与在衬底中传播的MIR-FEL光的二次谐波波长相匹配。获得的F//与材料的带隙能量相对相关,近红外飞秒激光器的带隙能量也是如此。在SiC-4H或GaN的同一位置上,还观察到另一种垂直于MIR-FEL极化的LIPSS,其间距为λFEL至λFEL/9,其影响比仅形成//-LIPSS更高。
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