Characterization of LDO Induced Increment of SEE Sensitivity for 22-nm FDSOI SRAM

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-18 DOI:10.1109/TDMR.2023.3316625

Chang Cai;Yuzhu Liu;Minchi Hu;Gengshen Chen;Jun Yu

引用次数: 0

Abstract

The radiation sensitivity of the Static Random-Access Memory (SRAM) device depends on the basic memory cell and peripheral circuits, and the influence of peripheral circuits is difficult to measure and classify, especially for the internal low dropout regulator (LDO) modules. In this paper, the LDO with radiation-tolerant bipolar bandgap was designed and fabricated to provide power supply for Fully Depleted Silicon on Insulator (FDSOI) SRAM test chips. The LDO induced Single Event Effects (SEE) for SRAM devices were investigated by pulsed laser and heavy ion irradiation tests. The simulation and irradiation results show that the hardened LDO has high SEE tolerance, while a few upset errors for memory units were induced by the transient turbulence of the internal LDO in test chips. The characterization results of LDOs provide specific insights into radiation sensitivity and impacts on the whole chips, and contribute to the full evaluation of high-reliable circuits and systems for space applications.

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LDO诱导22 nm FDSOI SRAM SEE灵敏度增加的特性

静态随机存取存储器(SRAM)器件的辐射灵敏度取决于基本存储单元和外围电路，外围电路的影响难以测量和分类，特别是对于内部低差调节器(LDO)模块。本文设计并制作了具有耐辐射双极带隙的LDO，为全耗尽绝缘体上硅(FDSOI) SRAM测试芯片提供电源。采用脉冲激光和重离子辐照实验研究了LDO对SRAM器件的单事件效应。仿真和辐照结果表明，硬化后的LDO具有较高的SEE耐受性，但测试芯片中LDO内部的瞬态湍流会对存储单元产生一定的扰动误差。ldo的表征结果提供了对整个芯片的辐射灵敏度和影响的具体见解，并有助于对空间应用的高可靠性电路和系统进行全面评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

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