Pub Date : 2024-06-28DOI: 10.1109/tdmr.2024.3420759
G.C. Lyu, X.P. Zhang, M.B. Zhou, C.B. Ke, Y.W. Mai
{"title":"Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria—Part I: Accurate Formulation of Singular Stress Fields","authors":"G.C. Lyu, X.P. Zhang, M.B. Zhou, C.B. Ke, Y.W. Mai","doi":"10.1109/tdmr.2024.3420759","DOIUrl":"https://doi.org/10.1109/tdmr.2024.3420759","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141506379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TDMR.2024.3405612
{"title":"Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/TDMR.2024.3405612","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3405612","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10566484","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TDMR.2024.3405820
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Pub Date : 2024-06-20DOI: 10.1109/TDMR.2024.3405819
{"title":"IEEE Transactions on Device and Materials Reliability Information for Authors","authors":"","doi":"10.1109/TDMR.2024.3405819","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3405819","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10566483","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TDMR.2024.3407548
Charles LaRow
The IEEE International Integrated Reliability Workshop (IIRW) is a distinctive event which brings together reliability researchers, professionals, and students from around the globe to a common forum for lively discussions, wonderful technical presentations, and beautiful scenery for 4 days and nights. The event takes place every year at Fallen Leaf Lake in South Lake Tahoe, CA, USA, where attendees are housed within a secluded camp with informal meeting spaces and access to boats, trails, and many other outdoor activities. The scope of content centers around hot topics in, novel techniques for, and general knowledge on semiconductor reliability research and industry challenges. Talks on transistor and front-end-of-the-line (FEOL) reliability, bias temperature instability (BTI), hot carrier (HC), gate dielectric time-dependent dielectric breakdown (TDDB), back-end-of-the-line (BEOL) reliability, Interconnect TDDB, electro-migration (EM), circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis (FA), wafer-level reliability (WLR), among other topic are presented. The key focus areas at IIRW 2023 were Advanced node scaling solutions (FEOL/MOL/BEOL), circuit reliability (device-circuit degradation and aging).
{"title":"Guest Editorial TDMR IIRW Special Section","authors":"Charles LaRow","doi":"10.1109/TDMR.2024.3407548","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3407548","url":null,"abstract":"The IEEE International Integrated Reliability Workshop (IIRW) is a distinctive event which brings together reliability researchers, professionals, and students from around the globe to a common forum for lively discussions, wonderful technical presentations, and beautiful scenery for 4 days and nights. The event takes place every year at Fallen Leaf Lake in South Lake Tahoe, CA, USA, where attendees are housed within a secluded camp with informal meeting spaces and access to boats, trails, and many other outdoor activities. The scope of content centers around hot topics in, novel techniques for, and general knowledge on semiconductor reliability research and industry challenges. Talks on transistor and front-end-of-the-line (FEOL) reliability, bias temperature instability (BTI), hot carrier (HC), gate dielectric time-dependent dielectric breakdown (TDDB), back-end-of-the-line (BEOL) reliability, Interconnect TDDB, electro-migration (EM), circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis (FA), wafer-level reliability (WLR), among other topic are presented. The key focus areas at IIRW 2023 were Advanced node scaling solutions (FEOL/MOL/BEOL), circuit reliability (device-circuit degradation and aging).","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10566481","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TDMR.2024.3405818
{"title":"IEEE Transactions on Device and Materials Reliability Publication Information","authors":"","doi":"10.1109/TDMR.2024.3405818","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3405818","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10566480","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TDMR.2024.3412348
{"title":"Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers","authors":"","doi":"10.1109/TDMR.2024.3412348","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3412348","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10566482","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-31DOI: 10.1109/tdmr.2024.3407855
Kaining Kuang, Xinhua Guo, Chunzhen Li, Xiuwan Li
{"title":"A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses","authors":"Kaining Kuang, Xinhua Guo, Chunzhen Li, Xiuwan Li","doi":"10.1109/tdmr.2024.3407855","DOIUrl":"https://doi.org/10.1109/tdmr.2024.3407855","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141192456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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