{"title":"Coherence Improvement of Dual-Lens Electron Holography","authors":"Yun-Yu Wang, Zhouguang Wang, Qiang Jin","doi":"10.1093/mictod/qaad027","DOIUrl":null,"url":null,"abstract":"Abstract Coherence is one of the limiting factors in off-axis electron holography applications. This paper reports methods to improve coherence ∼18-fold by using a smaller biprism and implementing a direct electron counting camera (K-camera) in combination with an imaging filter system. We achieved 0.4 nm fringe spacing with a 1.5 μm field-of-view and ∼33% fringe contrast. The maximum coherence number, N′, of ∼1.8 × 103 was achieved, where N′ is defined as the number of fringes times fringe contrast. High spatial resolution junction profile images (nm scale) of n-channel and p-channel field-effect transistors (nFET and pFET) are demonstrated with a large field-of-view (μm scale).","PeriodicalId":74194,"journal":{"name":"Microscopy today","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microscopy today","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1093/mictod/qaad027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Abstract Coherence is one of the limiting factors in off-axis electron holography applications. This paper reports methods to improve coherence ∼18-fold by using a smaller biprism and implementing a direct electron counting camera (K-camera) in combination with an imaging filter system. We achieved 0.4 nm fringe spacing with a 1.5 μm field-of-view and ∼33% fringe contrast. The maximum coherence number, N′, of ∼1.8 × 103 was achieved, where N′ is defined as the number of fringes times fringe contrast. High spatial resolution junction profile images (nm scale) of n-channel and p-channel field-effect transistors (nFET and pFET) are demonstrated with a large field-of-view (μm scale).