Development and synchronization of semiconductors excitation sources for active elements on self-terminatint transitions in metal vapors

IF 0.2 Q4 PHYSICS, MULTIDISCIPLINARY Recent Contributions to Physics Pub Date : 2023-09-01 DOI:10.26577/rcph.2023.v86.i3.07
N.A. Vasnev
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Abstract

The paper is devoted to development of atypical excitation approaches of bistatic laser monitor active elements for the imaging of high-speed processes at a powerful background radiation. The practical significance is increasing the temporal resolution of the bistatic laser monitor, as well as improving the imaging parameters by minimizing the jitter of radiation pulses. To achieve this goal, semiconductor excitation sources of active media based on copper bromide vapor were developed, and their synchronization was performed in a pulse-repetition mode. The developed pump sources are set of identical commutation cells. Each cell contains storage capacitor, commutator and transformer. Powerful HGTG27N120BN insulated-gate bipolar transistors (IGBT) were chosen as commutators. Their switching storage capacitors are discharged through the primary winding of the transformer and as result the voltage pulse is induced in the secondary winding. The transformer load was the gas discharge tube (GDT) of the small-size brightness amplifier with the specified geometric parameters (l=40 cm, d=2.5 cm, V=196 cm3). The simultaneous switching of 10 identical cells provided GDT breakdown. The radiation power of the active element in oscillator mode was 665 mW. The developed brightness amplifier with semiconductor pump source was used in the bistatic scheme of the laser monitor for the imaging of the test object. The pumping of the second active element, the illumination source (l=90 cm, d=5 cm, V=1767 cm3), was performed by means of thyratron TGI1-1000-25. The pulse repetition frequency of the illumination source and the brightness amplifier was 10,5 and 21 kHz respectively. As result each second image was formed with increased brightness and contrast. The maximal jitter of radiation pulses in this case was 16 ns. The average jitter was 6 ns. Two identical semiconductor pump sources were tested simultaneously. The resulting array of waveforms (GDT current and GDT voltage) show that in most cases the jitter was completely absent, and when it appeared, it did not exceed 4 ns. The imaging at this configuration of the pump sources was not performed due to semiconductor source power (465 W) turned out to be insufficient for the excitation of the illumination source, and therefore options for increasing it were proposed.
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金属蒸气中自终止跃迁的半导体元件激发源的研制与同步
本文研究了双基地激光监测有源元件在强背景辐射下高速成像的非典型激发方法。其实际意义在于提高双基地激光监测仪的时间分辨率,并通过减小辐射脉冲的抖动来改善成像参数。为了实现这一目标,开发了基于溴化铜蒸汽的活性介质半导体激励源,并以脉冲重复模式进行了同步。开发的泵源是一组相同的换向电池。每个电池包含存储电容器、换向器和变压器。换向器选用高性能的HGTG27N120BN绝缘栅双极晶体管(IGBT)。它们的开关存储电容器通过变压器的初级绕组放电,因此在次级绕组中感应电压脉冲。变压器负载为指定几何参数(l=40 cm, d=2.5 cm, V=196 cm3)的小型亮度放大器气体放电管(GDT)。同时切换10个相同的电池提供GDT击穿。振荡模式下有源元件的辐射功率为665 mW。研制的半导体泵浦源亮度放大器应用于激光监视器的双基地方案中,对被测对象进行成像。第二个有源元件,即照明源(l=90 cm, d=5 cm, V=1767 cm3),通过闸流管tg1 -1000-25进行泵送。照明光源和亮度放大器的脉冲重复频率分别为10、5和21 kHz。结果,每一幅图像的亮度和对比度都有所增加。在这种情况下,辐射脉冲的最大抖动为16ns。平均抖动为6 ns。同时测试了两个相同的半导体泵源。得到的波形阵列(GDT电流和GDT电压)表明,在大多数情况下,抖动完全不存在,当它出现时,它不超过4 ns。由于半导体源功率(465 W)不足以激发照明源,因此没有在这种泵源配置下进行成像,因此提出了增加它的选项。
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