High-temperature oxidation resistance of CrAlN thin films prepared by DC reactive magnetron sputtering

Abstract

CrAlN thin films were prepared by using the reactive DC unbalanced magnetron sputtering method from the single alloy target on a silicon substrate. The effect of annealing temperature in the air which ranges from 500℃ to 900℃ for 1 h on phase structure, film composition, surface morphology, microstructure, and hardness was investigated by XRD, EDS, FE-SEM, and Nanoindentation techniques, respectively. The high-temperature (up to 900℃) oxidation resistance of the thin film was also evaluated. The result shows that solid solutions of (Cr,Al)N with (111), (200), and (220) planes for the as-deposited film and no oxide phase were found after annealing with different temperatures. The O content slightly increases with an increase in the annealing temperature with various Cr, Al, and N contents found by the EDS. From the FE-SEM result, as increased annealing temperature, the evolution of cross-sectional morphology from dense to compact columnar structure was exhibited but the oxides layer was not detected. These results concluded that the as-deposited thin film showed good oxidation resistance when annealed in air at an elevated temperature reaching 900℃. Moreover, the film’s hardness decreased from 61.19 GPa to 50.11 GPa with increasing the annealing temperature observed by the Nanoindentation technique.