Design, Fabrication and Measurement of Radio Frequency Micro-Electro-Mechanical Systems

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY IEEE Open Journal of Nanotechnology Pub Date : 2023-10-03 DOI:10.1109/OJNANO.2023.3318236
Girija Sravani Kondavitee;Young Suh Song;Srinivasa Rao Karumuri;Koushik Guha;Brajesh Kumar Kaushik;Aimé Lay-Ekuakille
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Abstract

This article describes the fabrication and experimental results of a novel step structure Radio Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular patch antenna. The RF MEMS switch is developed using surface micromachining technology and exhibits several desirable characteristics. The key findings and features of the proposed RF MEMS switch are as follows: The switch operates at a very low pull-in voltage of 4.4 V, which is advantageous as it requires low actuation voltage for switching operations. Low ON State Capacitance: The switch demonstrates a low ON state capacitance of 81.2 fF, indicating efficient switching performance. High Isolation: The switch exhibits high isolation of −60.68 dB at 23 GHz, which is the central frequency of the K-band. This high isolation ensures minimal interference and improved signal integrity. The RF MEMS switch is integrated with a circular patch antenna, enabling reconfigurability in the operating frequency of the antenna. The antenna's frequency can be adjusted by actuating the switches alternatively. The specific operating frequencies and return loss values are as follows: Both Switches ON: The antenna radiates the signal at a frequency of 19.2 GHz with a return loss of −26.7 dB. Only Switch A ON: The antenna radiates at a frequency of 21 GHz with a return loss of −17.6 dB. Only Switch B ON: The antenna radiates the signal at a frequency of 26.4 GHz with a return loss of −17.47 dB. The RF MEMS switch and antenna are optimized to transmit RF signals within the K-band frequency range. The integration of the step structured RF MEMS switches successfully enables reconfiguration of the antenna's operating frequency. The proposed antenna, integrated with the RF MEMS switches, has potential applications in various K-band systems, including surface movement radars, direct broadcast satellite, Direct-to-Home (DHT) television, and 5th Generation (5G) mobile communication. The reconfigurability of the antenna's frequency allows for flexibility and adaptability in different K-band applications.
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射频微机电系统的设计、制造与测量
本文介绍了一种新型带圆形贴片天线的阶跃结构射频微机电系统(RF MEMS)开关的制作和实验结果。射频MEMS开关是利用表面微加工技术开发的,具有几个理想的特性。所提出的RF MEMS开关的主要发现和特点如下:该开关在4.4 V的极低拉入电压下工作,这是有利的,因为它需要低的开关操作驱动电压。低ON状态电容:开关具有81.2 fF的低ON状态电容,显示了高效的开关性能。高隔离:该开关在23 GHz时具有-60.68 dB的高隔离度,这是k波段的中心频率。这种高隔离确保最小的干扰和改进的信号完整性。RF MEMS开关集成了圆形贴片天线,使天线的工作频率可重新配置。天线的频率可以通过交替驱动开关来调节。具体工作频率和回波损耗值如下:Both switch ON:天线以19.2 GHz的频率发射信号,回波损耗为-26.7 dB。仅开关A ON:天线辐射频率为21ghz,回波损耗为-17.6 dB。仅开关B ON:天线以26.4 GHz的频率辐射信号,回波损耗为-17.47 dB。射频MEMS开关和天线经过优化,可以在k波段频率范围内传输射频信号。阶跃结构RF MEMS开关的集成成功地实现了天线工作频率的重新配置。该天线与RF MEMS开关集成在一起,在各种k波段系统中具有潜在的应用,包括地面运动雷达、直接广播卫星、直接到户(DHT)电视和第五代(5G)移动通信。天线频率的可重构性允许在不同的k波段应用中具有灵活性和适应性。
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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