Pub Date : 2026-01-23DOI: 10.1109/OJNANO.2026.3656032
{"title":"2025 Index IEEE Open Journal of Nanotechnology","authors":"","doi":"10.1109/OJNANO.2026.3656032","DOIUrl":"https://doi.org/10.1109/OJNANO.2026.3656032","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"1-8"},"PeriodicalIF":1.9,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11363072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Graphene has long been considered a revolutionary material for the field of electronics due to its remarkable set of electronic properties, standing as a very promising candidate for the post-silicon era. However, it is not just a silicon replacement, but rather an enabling material for different computing paradigms. In this work, we investigate the use of graphene in devices and circuits that are employed for the realisation of computing architectures and systems. More specifically, we focus on impactful key applications such as conventional computing and Boolean logic, high-radix computing and multi-valued logic, memristive devices and in-memory-computing, neuromorphic applications, quantum computing and photonics. Additionally, taking into consideration the state-of-the-art as well as the existing graphene-related challenges that are still present, this work attempts to assess the possible future development of graphene-based devices, circuits and systems in each of the aforementioned fields and to propose a coarse yet directive roadmap for the material’s future in computing architectures.
{"title":"Graphene for Computing: Devices to Architectures","authors":"Konstantinos Rallis;Georgios Kleitsiotis;Athanasios Passias;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos Tsakalos;Antonio Rubio;Sorin Cotofana;Ioannis Karafyllidis;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2025.3646972","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3646972","url":null,"abstract":"Graphene has long been considered a revolutionary material for the field of electronics due to its remarkable set of electronic properties, standing as a very promising candidate for the post-silicon era. However, it is not just a silicon replacement, but rather an enabling material for different computing paradigms. In this work, we investigate the use of graphene in devices and circuits that are employed for the realisation of computing architectures and systems. More specifically, we focus on impactful key applications such as conventional computing and Boolean logic, high-radix computing and multi-valued logic, memristive devices and in-memory-computing, neuromorphic applications, quantum computing and photonics. Additionally, taking into consideration the state-of-the-art as well as the existing graphene-related challenges that are still present, this work attempts to assess the possible future development of graphene-based devices, circuits and systems in each of the aforementioned fields and to propose a coarse yet directive roadmap for the material’s future in computing architectures.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"7 ","pages":"1-17"},"PeriodicalIF":1.9,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11309749","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146049292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-19DOI: 10.1109/OJNANO.2025.3635934
Supriyo Bandyopadhyay;Giovanni Finocchio
{"title":"Guest Editorial: Special Issue in Memory of Prof. Brajesh Kumar Kaushik","authors":"Supriyo Bandyopadhyay;Giovanni Finocchio","doi":"10.1109/OJNANO.2025.3635934","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3635934","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"187-188"},"PeriodicalIF":1.9,"publicationDate":"2025-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11306198","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1109/OJNANO.2025.3639059
Joseph Batta-Mpouma;Gurshagan Kandhola;Jaspreet Kaur;Jae-Woon Lim;Kalindu Perera;Hoon Seonwoo;Joshua Sakon;Jin-Woo Kim
Cellulose nanocrystals (CNCs) have emerged as versatile nanomaterials with exceptional mechanical, optical, and surface-chemical properties that enable their integration into diverse composite systems. This review summarizes key strategies for engineering CNC-based composites through covalent, non-covalent, and hybrid crosslinking mechanisms, highlighting how these interactions govern material structure and performance. Beyond conventional bulk composites, recent studies have explored their incorporation into interfacial and surface-assembled systems, thereby broadening the design space for CNC-enabled materials. These approaches are finding utility across multiple application areas, particularly in biomedical, packaging, and functional material design. Collectively, these developments underscore CNCs’ versatility as multifunctional building blocks and their growing potential to drive next-generation material innovation.
{"title":"Physicochemical Dynamics and Site-Specific Crosslinking at Cellulose Nanocrystal Interfaces for Multifunctional Material Design","authors":"Joseph Batta-Mpouma;Gurshagan Kandhola;Jaspreet Kaur;Jae-Woon Lim;Kalindu Perera;Hoon Seonwoo;Joshua Sakon;Jin-Woo Kim","doi":"10.1109/OJNANO.2025.3639059","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3639059","url":null,"abstract":"Cellulose nanocrystals (CNCs) have emerged as versatile nanomaterials with exceptional mechanical, optical, and surface-chemical properties that enable their integration into diverse composite systems. This review summarizes key strategies for engineering CNC-based composites through covalent, non-covalent, and hybrid crosslinking mechanisms, highlighting how these interactions govern material structure and performance. Beyond conventional bulk composites, recent studies have explored their incorporation into interfacial and surface-assembled systems, thereby broadening the design space for CNC-enabled materials. These approaches are finding utility across multiple application areas, particularly in biomedical, packaging, and functional material design. Collectively, these developments underscore CNCs’ versatility as multifunctional building blocks and their growing potential to drive next-generation material innovation.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"7 ","pages":"18-33"},"PeriodicalIF":1.9,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11271597","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-07DOI: 10.1109/OJNANO.2025.3630545
Ioannis K. Chatzipaschalis;Pantelis Fraidakis;Georgios K. Kleitsiotis;Ioannis Tompris;Athanasios Passias;Emmanouil Stavroulakis;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos-Alexandros Tsakalos;Konstantinos Rallis;Iosif-Angelos Fyrigos;Vasileios Ntinas;Antonio Rubio;Georgios Ch. Sirakoulis
Memristors and crossbar arrays are increasingly regarded as fundamental nanotechnology components for future computing and storage technologies, with promising applications in neuromorphic systems, non-volatile memories, and in-memory processing. However, their characterization and programming require precise waveform generation and reproducible signal control, which pose non-trivial challenges in experimental workflows. Developing dedicated software for waveform design in this context is particularly demanding, as it must support diverse signal types, customizable timing, and the coordination of row/column activations in crossbar architectures, while remaining intuitive for non-specialist users. This paper presents WaCPro, an open-source application that integrates waveform generation, crossbar mapping, visualization, and export functionalities into a single platform for the characterization and programming of nanoscale memristive devices and crossbar arrays. Implemented in MATLAB with a modular architecture and a graphical user interface, WaCPro enables the design and export of precisely-timed waveforms essential for the electrical stimulation of nanodevices. Export functions produce simulation- and instrumentation-ready files in widely used formats, facilitating integration into laboratory workflows, highlighting the tool’s ability to bridge theory and experiment. Validation experiments demonstrate excellent waveform replication accuracy in both amplitude and timing, confirming the reliability of the proposed tool for nanoscale testing environments.
{"title":"WaCPro: An Open-Source Application for Waveform and Crossbar Programming in Nanotechnology Research","authors":"Ioannis K. Chatzipaschalis;Pantelis Fraidakis;Georgios K. Kleitsiotis;Ioannis Tompris;Athanasios Passias;Emmanouil Stavroulakis;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos-Alexandros Tsakalos;Konstantinos Rallis;Iosif-Angelos Fyrigos;Vasileios Ntinas;Antonio Rubio;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2025.3630545","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3630545","url":null,"abstract":"Memristors and crossbar arrays are increasingly regarded as fundamental nanotechnology components for future computing and storage technologies, with promising applications in neuromorphic systems, non-volatile memories, and in-memory processing. However, their characterization and programming require precise waveform generation and reproducible signal control, which pose non-trivial challenges in experimental workflows. Developing dedicated software for waveform design in this context is particularly demanding, as it must support diverse signal types, customizable timing, and the coordination of row/column activations in crossbar architectures, while remaining intuitive for non-specialist users. This paper presents WaCPro, an open-source application that integrates waveform generation, crossbar mapping, visualization, and export functionalities into a single platform for the characterization and programming of nanoscale memristive devices and crossbar arrays. Implemented in MATLAB with a modular architecture and a graphical user interface, WaCPro enables the design and export of precisely-timed waveforms essential for the electrical stimulation of nanodevices. Export functions produce simulation- and instrumentation-ready files in widely used formats, facilitating integration into laboratory workflows, highlighting the tool’s ability to bridge theory and experiment. Validation experiments demonstrate excellent waveform replication accuracy in both amplitude and timing, confirming the reliability of the proposed tool for nanoscale testing environments.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"170-178"},"PeriodicalIF":1.9,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11231390","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-31DOI: 10.1109/OJNANO.2025.3628180
Andrea Meo;Giuseppe Borzì;Anna Giordano;Mario Carpentieri;Riccardo Tomasello;Giovanni Finocchio
Antiferromagnets (AFMs), having no stray fields and terahertz frequency dynamics, are ideal candidates to be employed as material elements in antennas in 5G/6G systems, where compact, efficient antennas working in the radiofrequency are essential. Voltage controlled magnetic anisotropy (VCMA) can provide an energy-efficient electrical method for controlling AFMs thanks to reduced ohmic losses. In addition, VCMA can drive parametric excitation achieving large-amplitude precession of the AFM state achieving greater efficiency than conventional excitation methods. Here, we theoretically study the response of the AFM induced by an incident radiofrequency electromagnetic (EM) wave, modelled as a time-dependent spatially inhomogeneous VCMA drive. We find that it is possible to excite parametrically the AFM at twice the input frequency, with total suppression of the input mode when the incident EM radiation satisfies the standing wave conditions. This shows how this system can be exploited as a receiving antenna in the radiofrequency range with the capability of generating an output signal with twice the input frequency. Therefore, AFM-based antennas could overcome current limitations in traditional antenna designs, offering an in-materio and low-power tool for terahertz communication applications.
{"title":"Antiferromagnetic Antenna Based on Parametric Resonance Driven by Spatially Non-Uniform Voltage-Controlled Magnetic Anisotropy","authors":"Andrea Meo;Giuseppe Borzì;Anna Giordano;Mario Carpentieri;Riccardo Tomasello;Giovanni Finocchio","doi":"10.1109/OJNANO.2025.3628180","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3628180","url":null,"abstract":"Antiferromagnets (AFMs), having no stray fields and terahertz frequency dynamics, are ideal candidates to be employed as material elements in antennas in 5G/6G systems, where compact, efficient antennas working in the radiofrequency are essential. Voltage controlled magnetic anisotropy (VCMA) can provide an energy-efficient electrical method for controlling AFMs thanks to reduced ohmic losses. In addition, VCMA can drive parametric excitation achieving large-amplitude precession of the AFM state achieving greater efficiency than conventional excitation methods. Here, we theoretically study the response of the AFM induced by an incident radiofrequency electromagnetic (EM) wave, modelled as a time-dependent spatially inhomogeneous VCMA drive. We find that it is possible to excite parametrically the AFM at twice the input frequency, with total suppression of the input mode when the incident EM radiation satisfies the standing wave conditions. This shows how this system can be exploited as a receiving antenna in the radiofrequency range with the capability of generating an output signal with twice the input frequency. Therefore, AFM-based antennas could overcome current limitations in traditional antenna designs, offering an in-materio and low-power tool for terahertz communication applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"146-152"},"PeriodicalIF":1.9,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11223752","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-31DOI: 10.1109/OJNANO.2025.3627500
Anant Aravind Kulkarni;Shivam Verma
This article presents the generation of Greenberger–Horne–Zeilinger (GHZ) states using a spin-torque-based qubit architecture, introducing a hardware-native decomposition of the Hadamard and controlled NOT (CNOT) gates. Unlike optical or superconducting implementations, the proposed approach exploits intrinsic spin-transfer-torque dynamics to realize single-qubit and entangling operations with minimal external control. The method reduces gate overhead and decoherence, enabling high-fidelity (> 99%) GHZ formation. An unequal entanglement amplitude naturally arises from spin-torque non-linearities and is analytically characterized as a tunable property advantageous for quantum secret sharing (QSS) and asymmetric quantum communication schemes. Numerical simulations of state evolution and density-matrix fidelity validate the robustness and efficiency of the approach. The results demonstrate that current-driven spin-torque interactions provide a compact, energy-efficient platform for scalable multi-qubit entanglement, linking spintronic device physics with quantum information processing.
{"title":"Inequal Three Qubit Entanglement Using GHZ State Generation for Spin-Torque Based Qubit Architecture","authors":"Anant Aravind Kulkarni;Shivam Verma","doi":"10.1109/OJNANO.2025.3627500","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3627500","url":null,"abstract":"This article presents the generation of Greenberger–Horne–Zeilinger (GHZ) states using a spin-torque-based qubit architecture, introducing a hardware-native decomposition of the Hadamard and controlled NOT (CNOT) gates. Unlike optical or superconducting implementations, the proposed approach exploits intrinsic spin-transfer-torque dynamics to realize single-qubit and entangling operations with minimal external control. The method reduces gate overhead and decoherence, enabling high-fidelity (> 99%) GHZ formation. An unequal entanglement amplitude naturally arises from spin-torque non-linearities and is analytically characterized as a tunable property advantageous for quantum secret sharing (QSS) and asymmetric quantum communication schemes. Numerical simulations of state evolution and density-matrix fidelity validate the robustness and efficiency of the approach. The results demonstrate that current-driven spin-torque interactions provide a compact, energy-efficient platform for scalable multi-qubit entanglement, linking spintronic device physics with quantum information processing.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"179-186"},"PeriodicalIF":1.9,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11223042","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High standby power has become a critical challenge for CMOS circuits below the 90 nm technology node as leakage currents continue to rise. Deeply scaled technologies not only increase power consumption due to subthreshold leakage but also make circuits more vulnerable to side-channel attacks (SCAs), especially leakage power analysis (LPA). Spin-based devices, like magnetic tunnel junctions (MTJs), offer key advantages such as non-volatility, high endurance, low standby power, and compatibility with CMOS technology. While switching mechanisms like spin torque transfer (STT) and spin-orbit torque (SOT) reduce energy consumption, their nanosecond-scale operation is constrained by spin precession. In contrast, all-optical switching (AOS) of MTJs enables magnetization reversal in sub-picosecond timescales, offering faster operation. This paper presents an optically switched fully non-volatile magnetic full-adder (OS-NV-MFA) circuit that uses AOS for input storage in MTJs, achieving both energy-efficiency and SCA-resilience. Results show that the OS-NV-MFA provides 56.11%, 50.78%, and 58.09% improvements in read latency and reduces total power by 76.69%, 53.28%, and 81.97% compared to NV-MFA, STT MFA, and SHE NV-MFA, respectively. Furthermore, the use of configurable and reference MTJs ensures indistinguishable subthreshold leakage currents for ‘0’ and ‘1’ states, enhancing resistance to LPA-based SCAs.
{"title":"Energy Efficient Ultra-Fast Optically Switched Fully Non-Volatile Magnetic Full Adder for Enhanced Side-Channel Attack Resilience","authors":"Surya Narain Dikshit;Alok Kumar Shukla;Sandeep Soni;Himanshu Fulara;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2025.3625815","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3625815","url":null,"abstract":"High standby power has become a critical challenge for CMOS circuits below the 90 nm technology node as leakage currents continue to rise. Deeply scaled technologies not only increase power consumption due to subthreshold leakage but also make circuits more vulnerable to side-channel attacks (SCAs), especially leakage power analysis (LPA). Spin-based devices, like magnetic tunnel junctions (MTJs), offer key advantages such as non-volatility, high endurance, low standby power, and compatibility with CMOS technology. While switching mechanisms like spin torque transfer (STT) and spin-orbit torque (SOT) reduce energy consumption, their nanosecond-scale operation is constrained by spin precession. In contrast, all-optical switching (AOS) of MTJs enables magnetization reversal in sub-picosecond timescales, offering faster operation. This paper presents an optically switched fully non-volatile magnetic full-adder (OS-NV-MFA) circuit that uses AOS for input storage in MTJs, achieving both energy-efficiency and SCA-resilience. Results show that the OS-NV-MFA provides 56.11%, 50.78%, and 58.09% improvements in read latency and reduces total power by 76.69%, 53.28%, and 81.97% compared to NV-MFA, STT MFA, and SHE NV-MFA, respectively. Furthermore, the use of configurable and reference MTJs ensures indistinguishable subthreshold leakage currents for ‘0’ and ‘1’ states, enhancing resistance to LPA-based SCAs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"162-169"},"PeriodicalIF":1.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11218157","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spintronic Physically Unclonable Functions (PUFs) show promise in enhancing electronic system security due to their inherent randomness, low energy consumption, fast response times, and temperature stability. This paper presents a novel PUF based on voltage-gated spin-orbit torque magnetic tunnel junctions (VGSOT-MTJs) that compares the resistance of MTJ cells utilizing intrinsic process variations to get an output response. Compared to arbiter PUFs, the proposed PUF provides a significantly larger effective challenge-response pair (CRP) space by supporting multiple independent configurations and is also reconfigurable. The Proposed VGSOT-MTJ based PUF implemented at 45 nm technology achieves a lower energy consumption of 63.67 fJ/bit and a throughput of 0.27 Gb/s at a supply voltage of 1 V. The proposed PUF achieves near-ideal uniqueness of 50.2% and a high reliability of 97.3%. Moreover, the proposed PUF demonstrates strong resistance to both machine learning (ML) and side-channel attacks. An ML attack using a multilayer perceptron (MLP) yielded a prediction accuracy of under 55.27%, indicating the PUF’s resilience. The correlation power analysis (CPA) confirmed the PUF’s robustness against side-channel attacks. The designed VGSOT-MTJ based PUF shows robust performance with higher energy efficiency and is highly suitable for resource constrained Internet of Things applications.
{"title":"Energy-Efficient and Attacks Resilient PUF Design Exploiting VGSOT-MTJ","authors":"Kunal Kranti Das;Aditya Japa;Deepika Gupta;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2025.3625466","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3625466","url":null,"abstract":"Spintronic Physically Unclonable Functions (PUFs) show promise in enhancing electronic system security due to their inherent randomness, low energy consumption, fast response times, and temperature stability. This paper presents a novel PUF based on voltage-gated spin-orbit torque magnetic tunnel junctions (VGSOT-MTJs) that compares the resistance of MTJ cells utilizing intrinsic process variations to get an output response. Compared to arbiter PUFs, the proposed PUF provides a significantly larger effective challenge-response pair (CRP) space by supporting multiple independent configurations and is also reconfigurable. The Proposed VGSOT-MTJ based PUF implemented at 45 nm technology achieves a lower energy consumption of 63.67 fJ/bit and a throughput of 0.27 Gb/s at a supply voltage of 1 V. The proposed PUF achieves near-ideal uniqueness of 50.2% and a high reliability of 97.3%. Moreover, the proposed PUF demonstrates strong resistance to both machine learning (ML) and side-channel attacks. An ML attack using a multilayer perceptron (MLP) yielded a prediction accuracy of under 55.27%, indicating the PUF’s resilience. The correlation power analysis (CPA) confirmed the PUF’s robustness against side-channel attacks. The designed VGSOT-MTJ based PUF shows robust performance with higher energy efficiency and is highly suitable for resource constrained Internet of Things applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"153-161"},"PeriodicalIF":1.9,"publicationDate":"2025-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11216370","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-13DOI: 10.1109/OJNANO.2025.3620878
Christina Villeneuve-Faure;Laurent Boudou;Gilbert Teyssedre;Kremena Makasheva
The intense work on development of unconventional approaches for computing and signal processing involves efforts on design and engineering of materials with tunable dielectric properties and switchable electrical state as conduction state. This is the case of in-memory computing using emerging non-volatile memories which has successfully opened up new prospects for neuromorphic computing via the option of high volume data traffic between processor and memory units but faces materials-related challenges mostly attributed to the intrinsic and non-ideal device properties and expresses complexity in hardware implementation. In the effort to advance on the concept we describe here a way for controlled modulation at nanoscale of the dielectric response of plasma synthesized silver nanoparticles (AgNPs)-based nanocomposites and a method for mapping their dielectric permittivity via Electrostatic Force Microscopy. By embedding a 2D-network of AgNPs close to the surface of thin SiO2-layers, one can locally modulate the relative dielectric permittivity (ϵr) of the device in a large range. The presence of AgNPs in the dielectric layer leads to a nanostructuration of the relative dielectric permittivity, with lower ϵr-values above the AgNPs and higher ones in-between them, when compared to the ϵr-value of a homogeneous SiO2. A nanostructuration factor is introduced to account for this effect. The nanostructured dielectric response is related to modulation of the electric field inside these AgNPs-based nanocomposites. The results in this work generate important contributions towards the practical applicability of such AgNPs-based nanocomposites for neuromorphic computing, which is considered as an important step towards device engineering.
{"title":"Dielectric Permittivity Modulation at Nanoscale in Plasma Synthesized Silver Nanoparticles Based Nanocomposites for In-Memory Computing","authors":"Christina Villeneuve-Faure;Laurent Boudou;Gilbert Teyssedre;Kremena Makasheva","doi":"10.1109/OJNANO.2025.3620878","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3620878","url":null,"abstract":"The intense work on development of unconventional approaches for computing and signal processing involves efforts on design and engineering of materials with tunable dielectric properties and switchable electrical state as conduction state. This is the case of in-memory computing using emerging non-volatile memories which has successfully opened up new prospects for neuromorphic computing via the option of high volume data traffic between processor and memory units but faces materials-related challenges mostly attributed to the intrinsic and non-ideal device properties and expresses complexity in hardware implementation. In the effort to advance on the concept we describe here a way for controlled modulation at nanoscale of the dielectric response of plasma synthesized silver nanoparticles (AgNPs)-based nanocomposites and a method for mapping their dielectric permittivity via Electrostatic Force Microscopy. By embedding a 2D-network of AgNPs close to the surface of thin SiO<sub>2</sub>-layers, one can locally modulate the relative dielectric permittivity (ϵ<sub>r</sub>) of the device in a large range. The presence of AgNPs in the dielectric layer leads to a nanostructuration of the relative dielectric permittivity, with lower ϵ<sub>r</sub>-values above the AgNPs and higher ones in-between them, when compared to the ϵ<sub>r</sub>-value of a homogeneous SiO<sub>2</sub>. A nanostructuration factor is introduced to account for this effect. The nanostructured dielectric response is related to modulation of the electric field inside these AgNPs-based nanocomposites. The results in this work generate important contributions towards the practical applicability of such AgNPs-based nanocomposites for neuromorphic computing, which is considered as an important step towards device engineering.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"131-145"},"PeriodicalIF":1.9,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11202627","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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