MoS2-based ultra-scaled photodetectors overcoming the diffraction limit

Abstract

An ultra-scaled MoS2-based phototransistor with a 20-nm channel length, leveraging the photogating mechanism, is shown to overcome the diffraction limit in a new article by Saptarshi Das and co-workers in this issue of Device. The resulting device exhibits an outstanding photosensitivity with a greatly enhanced response time. The authors demonstrate spectral uniformity using the gate bias as a control knob.