{"title":"MoS2-based ultra-scaled photodetectors overcoming the diffraction limit","authors":"Nazek El-Atab","doi":"10.1016/j.device.2023.100118","DOIUrl":null,"url":null,"abstract":"An ultra-scaled MoS2-based phototransistor with a 20-nm channel length, leveraging the photogating mechanism, is shown to overcome the diffraction limit in a new article by Saptarshi Das and co-workers in this issue of Device. The resulting device exhibits an outstanding photosensitivity with a greatly enhanced response time. The authors demonstrate spectral uniformity using the gate bias as a control knob.","PeriodicalId":101324,"journal":{"name":"Device","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Device","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/j.device.2023.100118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An ultra-scaled MoS2-based phototransistor with a 20-nm channel length, leveraging the photogating mechanism, is shown to overcome the diffraction limit in a new article by Saptarshi Das and co-workers in this issue of Device. The resulting device exhibits an outstanding photosensitivity with a greatly enhanced response time. The authors demonstrate spectral uniformity using the gate bias as a control knob.