Studying the effects of siloxane poisoning on a SnO2 metal oxide semiconductor gas sensor in temperature cycled operation enabling self-monitoring and self-compensation
Caroline Schultealbert, Tobias Baur, Tilman Sauerwald, Andreas Schütze
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引用次数: 0
Abstract
Abstract This work studies poisoning by the cyclic siloxane octamethylcyclotetrasiloxane on a commercially available semiconductor gas sensor in TCO (temperature cycled operation). The data is evaluated using the Sauerwald-Baur model and the DSR method (differential surface reduction). The sensitivity towards several gases (volatile organic compounds, hydrogen and carbon monoxide) is evaluated and compared with a sensor in constant temperature operation mode. The physical and chemical processes on the sensitive layer as well as the resulting selectivity towards hydrogen are discussed. A feature is identified that can be derived from the Sauerwald-Baur model (the differential surface oxidation, DSO) and that quantitatively expresses the sensor condition regarding siloxane poisoning. With the help of this feature, a self-compensation of the sensor signal is demonstrated.
期刊介绍：
The journal promotes dialogue between the developers of application-oriented sensors, measurement systems, and measurement methods and the manufacturers and measurement technologists who use them.
Topics
The manufacture and characteristics of new sensors for measurement technology in the industrial sector
New measurement methods
Hardware and software based processing and analysis of measurement signals to obtain measurement values
The outcomes of employing new measurement systems and methods.
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