{"title":"In2O3 decorated TiO2 for broadband photosensing applications","authors":"Sharmila B, Priyanka Dwivedi","doi":"10.1088/1361-6641/ad0175","DOIUrl":null,"url":null,"abstract":"Abstract This paper presents the fabrication and broadband photosensing of bare TiO 2 and In 2 O 3 decorated TiO 2 based photodetectors. The photosensing properties of the In 2 O 3 decorated TiO 2 were compared with the bare TiO 2 . The proposed photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet to near-infrared wavelengths. The In 2 O 3 decorated TiO 2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio in the order of 4 × 10 3 , which is 10 3 times higher than the TiO 2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA W –1 and 4.97 × 10 12 Jones respectively. Moreover, In 2 O 3 decorated TiO 2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"169 1","pages":"0"},"PeriodicalIF":1.9000,"publicationDate":"2023-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad0175","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Abstract This paper presents the fabrication and broadband photosensing of bare TiO 2 and In 2 O 3 decorated TiO 2 based photodetectors. The photosensing properties of the In 2 O 3 decorated TiO 2 were compared with the bare TiO 2 . The proposed photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet to near-infrared wavelengths. The In 2 O 3 decorated TiO 2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio in the order of 4 × 10 3 , which is 10 3 times higher than the TiO 2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA W –1 and 4.97 × 10 12 Jones respectively. Moreover, In 2 O 3 decorated TiO 2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.
期刊介绍：
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.
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