Han Yu, Teng Jiao, Xinming Dang, Yu Han, Yihan Li, Zhen Li, Peiran Chen, Xin Dong, Guoxing Li, Yuantao Zhang and Baolin Zhang
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引用次数: 0
Abstract
Ga2O3 is a fast-developing wide band semiconductor for solar-blind ultraviolet photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga2O3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga2O3 films, which exhibited high performance with high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA W−1, a photo-to-dark current ratio (PDCR) of 3.2 × 104 and a detectivity of 3.8 × 1013 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga2O3 films in the field of high-performance devices.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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