Photon Emission Intensity Analysis for Leakage Source Identification

Abstract

Abstract Photon Emission Microscopy (PEM) is a popular technique for microelectronics failure analysis by detecting the photon emission from a defective circuit, when a failing device is electrically exercised at certain voltage. The photon emission contains physical location information, photon emission spectral information and photon emission intensity information. People often use the physical location information to localize a defective circuit and guide the follow-up physical failure analysis to find the defects. However, this procedure does not always work. Sometimes, it shows no defect found (NDF). In this paper, we propose a new computer vision-based analysis of the photon emission intensity for identifying the root cause of the excessively high IDDQ at elevated Vdds. The procedure includes collecting photon emissions at different Vdds and a follow-up photon emission intensity analysis with computer vision techniques. The procedure was applied on a case of microprocessor chip. After analyzing the dependencies of photon emission intensity on Vdd for 4 types of circuits, it was concluded that the SRAM circuit leakage is the root cause of the excessively high IDDQ at elevated Vdd.