{"title":"Effect of C ion irradiation on AlGaAs/InGaAs HEMT","authors":"H. L. Wang, S. X. Sun, H. Y. Mei, Y. T. Gao","doi":"10.15251/jor.2023.195.483","DOIUrl":null,"url":null,"abstract":"In this paper, the damage caused by C ion irradiation on AlGaAs/InGaAs HEMT was investigated. The projection ranges of C ions with varying energies in AlGaAs and InGaAs materials were calculated using Monte Carlo simulation. Additionally, simulations were conducted to study the radiation-induced damage caused by 50 keV, 70 keV, and 100 keV C ions incident on the basic structure of the AlGaAs/InGaAs heterojunction.The results showed that when using 70 keV energy for C ions, a higher number of vacancy defects were generated. Based on these findings, the influence of defects introduced by different irradiation doses of 70 keV C ions on the DC and RF characteristics of the device was analyzed.","PeriodicalId":49156,"journal":{"name":"Journal of Ovonic Research","volume":null,"pages":null},"PeriodicalIF":0.9000,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15251/jor.2023.195.483","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the damage caused by C ion irradiation on AlGaAs/InGaAs HEMT was investigated. The projection ranges of C ions with varying energies in AlGaAs and InGaAs materials were calculated using Monte Carlo simulation. Additionally, simulations were conducted to study the radiation-induced damage caused by 50 keV, 70 keV, and 100 keV C ions incident on the basic structure of the AlGaAs/InGaAs heterojunction.The results showed that when using 70 keV energy for C ions, a higher number of vacancy defects were generated. Based on these findings, the influence of defects introduced by different irradiation doses of 70 keV C ions on the DC and RF characteristics of the device was analyzed.
期刊介绍：
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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