Micromachined subminiature condenser microphones in silicon

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 1992-04-01 DOI:10.1016/0924-4247(92)80044-4

W. Kühnel, G. Hess

引用次数: 60

Abstract

Silicon subminiature microphones can be manufactured with the methods of micromachining technology. Several condenser-type microphones have been designed and fabricated at our institute. Capacitive microphones are described, which have a structured back electrode and a membrane of silicon nitride. A smooth frequency response up to 30 kHz with a maximum open-circuit sensitivity of 10 mV/Pa is obtained. A special design of a capacitive sensor has been realized with the FET microphone. The drain current of a field-effect transistor with a suspended gate is modulated by the vibrations of the membrane. This design represents the first suspended-gate sensor, the drain current of which is deflection controlled. Design, construction and experimental results of sensitivity and frequency response are given.

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微机械微型硅电容器麦克风

采用微加工技术可以制造出硅微型传声器。本研究所设计并制作了几种冷凝器式传声器。描述了一种电容式麦克风，其具有结构化的背电极和氮化硅膜。获得了高达30 kHz的平滑频率响应，最大开路灵敏度为10 mV/Pa。利用场效应晶体管麦克风实现了电容式传感器的特殊设计。带悬栅的场效应晶体管的漏极电流由薄膜的振动调制。本设计是第一个采用偏转控制漏极电流的悬栅传感器。给出了灵敏度和频率响应的设计、结构和实验结果。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...