Li Sun, Yating Li, Jiacheng Xie, Liqi Zhou, Peng Wang, Jian-Bin Xu, Yi Shi, Xinran Wang, Daowei He
{"title":"Cover Image, Volume 1, Number 2, November 2023","authors":"Li Sun, Yating Li, Jiacheng Xie, Liqi Zhou, Peng Wang, Jian-Bin Xu, Yi Shi, Xinran Wang, Daowei He","doi":"10.1002/elt2.23","DOIUrl":null,"url":null,"abstract":"<p>The cover image is the structure diagram of bottom-gate staggered OTFT with the circuit diagram as the background, where the channel material is a typical small-molecule C<sub>10</sub>-DNTT. The metal atoms can penetrate into the charge transport layer, with damage-free, via modulating organic crystal thickness during thermal evaporation of electrode. This could effectively reduce the contact resistance to aid the development of high-performance organic devices and circuits.\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure>\n </p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"1 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.23","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electron","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/elt2.23","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The cover image is the structure diagram of bottom-gate staggered OTFT with the circuit diagram as the background, where the channel material is a typical small-molecule C10-DNTT. The metal atoms can penetrate into the charge transport layer, with damage-free, via modulating organic crystal thickness during thermal evaporation of electrode. This could effectively reduce the contact resistance to aid the development of high-performance organic devices and circuits.
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