A high-speed true random number generator based on Ag/SiNx/n-Si memristor

Abstract

The intrinsic variability of memristor switching behavior can be used as a natural source of randomness, this variability is valuable for safe applications in hardware, such as the true random number generator (TRNG). However, the speed of TRNG is still be further improved. Here, we propose a reliable Ag/SiN_x/n-Si volatile memristor, which exhibits a typical threshold switching device with stable repeat ability and fast switching speed. This volatile-memristor-based TRNG is combined with nonlinear feedback shift register (NFSR) to form a new type of high-speed dual output TRNG. Interestingly, the bit generation rate reaches a high speed of 112 kb/s. In addition, this new TRNG passed all 15 National Institute of Standards and Technology (NIST) randomness tests without post-processing steps, proving its performance as a hardware security application. This work shows that the SiN_x-based volatile memristor can realize TRNG and has great potential in hardware network security.