Pub Date : 2024-07-03DOI: 10.1007/s11467-024-1419-2
Subaek Lee, Juri Kim, Sungjun Kim
The emerging nonvolatile memory, three-dimensional vertical resistive random-access memory (VRRAM), inspired by the vertical NAND structure, has been proposed to replace NAND flash memory which has reached its integration limit. To improve the vertical ionic diffusion occurring in the conventional VRRAM structure, we propose a Pt/HfO2/TiO2/Ti self-aligned VRRAM with physically confined switching cells through sidewall thermal oxidation. We achieved stable bipolar switching, endurance (>104 cycles), and retention (>104 s) responses, and improved the interlayer leakage current issue through a distinctive self-aligned structure. Additionally, we elucidated the switching mechanism by analyzing current levels concerning ambient temperature. To utilize VRRAM for neuromorphic computing, the biological synaptic functions are emulated by applying pulse stimulation to the synaptic cell. The weight modulation of biological synapses is demonstrated based on potentiation, depression, spike-rate-dependent plasticity, and spike-timing-dependent plasticity. Additionally, we improve the pattern recognition rate by creating a linear conductance modulation with an incremental pulse train in pattern recognition simulations. The stable electrical characteristics and implementation of various synaptic functions demonstrate that self-aligned VRRAM is suitable for neuromorphic systems as a high-density synaptic device.
{"title":"Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array","authors":"Subaek Lee, Juri Kim, Sungjun Kim","doi":"10.1007/s11467-024-1419-2","DOIUrl":"https://doi.org/10.1007/s11467-024-1419-2","url":null,"abstract":"<p>The emerging nonvolatile memory, three-dimensional vertical resistive random-access memory (VRRAM), inspired by the vertical NAND structure, has been proposed to replace NAND flash memory which has reached its integration limit. To improve the vertical ionic diffusion occurring in the conventional VRRAM structure, we propose a Pt/HfO<sub>2</sub>/TiO<sub>2</sub>/Ti self-aligned VRRAM with physically confined switching cells through sidewall thermal oxidation. We achieved stable bipolar switching, endurance (>10<sup>4</sup> cycles), and retention (>10<sup>4</sup> s) responses, and improved the interlayer leakage current issue through a distinctive self-aligned structure. Additionally, we elucidated the switching mechanism by analyzing current levels concerning ambient temperature. To utilize VRRAM for neuromorphic computing, the biological synaptic functions are emulated by applying pulse stimulation to the synaptic cell. The weight modulation of biological synapses is demonstrated based on potentiation, depression, spike-rate-dependent plasticity, and spike-timing-dependent plasticity. Additionally, we improve the pattern recognition rate by creating a linear conductance modulation with an incremental pulse train in pattern recognition simulations. The stable electrical characteristics and implementation of various synaptic functions demonstrate that self-aligned VRRAM is suitable for neuromorphic systems as a high-density synaptic device.</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141527261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.1007/s11467-024-1413-8
Jiangtong Su, Xiaoqi Hou, Ning Dai, Yang Li
Localized surface plasmon resonance (LSPR) is an intriguing phenomenon that can break diffraction limitations and exhibit excellent light-confinement abilities, making it an attractive strategy for enhancing the light absorption capabilities of photodetectors. However, the complex mechanism behind this enhancement is still plaguing researchers, especially for hot-electron injection process, which inhibits further optimization and development. A clear guideline for basic physical model, enhancement mechanism, material selection and architectural design for LSPR photodetector are still required. This review firstly describes the mainstream understanding of fundamental physical modes of LSPR and related enhancement mechanism for LSPR photodetectors. Then, the universal strategies for tuning the LSPR frequency are introduced. Besides, the state-of-the-art progress in the development of LSPR photodetectors is briefly summarized. Finally, we highlight the remaining challenges and issues needed to be resolved in the future research.
{"title":"Localized surface plasmon resonance enhanced photodetector: Physical model, enhanced mechanism and applications","authors":"Jiangtong Su, Xiaoqi Hou, Ning Dai, Yang Li","doi":"10.1007/s11467-024-1413-8","DOIUrl":"https://doi.org/10.1007/s11467-024-1413-8","url":null,"abstract":"<p>Localized surface plasmon resonance (LSPR) is an intriguing phenomenon that can break diffraction limitations and exhibit excellent light-confinement abilities, making it an attractive strategy for enhancing the light absorption capabilities of photodetectors. However, the complex mechanism behind this enhancement is still plaguing researchers, especially for hot-electron injection process, which inhibits further optimization and development. A clear guideline for basic physical model, enhancement mechanism, material selection and architectural design for LSPR photodetector are still required. This review firstly describes the mainstream understanding of fundamental physical modes of LSPR and related enhancement mechanism for LSPR photodetectors. Then, the universal strategies for tuning the LSPR frequency are introduced. Besides, the state-of-the-art progress in the development of LSPR photodetectors is briefly summarized. Finally, we highlight the remaining challenges and issues needed to be resolved in the future research.</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141527262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1007/s11467-024-1426-3
Chengyuan Wang, Yun Chen, Jinwen Wang, Xin Yang, Hong Gao, Fuli Li
We experimentally demonstrate the generation of customized Laguerre–Gaussian (LG) beams whose intensity maxima are localized around any desired curves. The principle is to act with appropriate algebraic functions on the angular spectra of LG beams. We characterize the propagation properties of these beams and compare them with non-diffraction caustic beams possessing the same intensity profiles. The results manifest that the customized-LG beams can maintain their profiles during propagation and suffer less energy loss than the non-diffraction caustic beams, and hence are able to propagate a longer distance. Moreover, the customized-LG beam exhibits self-healing ability when parts of their bodies are blocked. This new structure beam has potential applications in areas such as optical communication, soliton routing and steering, and optical tweezing.
我们通过实验演示了定制拉盖尔-高斯(LG)光束的生成,这些光束的强度最大值被定位在任何所需的曲线周围。其原理是用适当的代数函数作用于 LG 光束的角频谱。我们描述了这些光束的传播特性,并将它们与具有相同强度剖面的非衍射苛性光束进行了比较。结果表明,与非衍射苛性光束相比,定制 LG 光束在传播过程中能保持其轮廓,能量损失较小,因此能传播更长的距离。此外,定制 LG 光束在其部分主体受阻时还能表现出自我修复能力。这种新结构光束在光通信、孤子路由和转向以及光镊等领域具有潜在的应用前景。
{"title":"Generation and characterization of customized Laguerre–Gaussian beams with arbitrary profiles","authors":"Chengyuan Wang, Yun Chen, Jinwen Wang, Xin Yang, Hong Gao, Fuli Li","doi":"10.1007/s11467-024-1426-3","DOIUrl":"https://doi.org/10.1007/s11467-024-1426-3","url":null,"abstract":"<p>We experimentally demonstrate the generation of customized Laguerre–Gaussian (LG) beams whose intensity maxima are localized around any desired curves. The principle is to act with appropriate algebraic functions on the angular spectra of LG beams. We characterize the propagation properties of these beams and compare them with non-diffraction caustic beams possessing the same intensity profiles. The results manifest that the customized-LG beams can maintain their profiles during propagation and suffer less energy loss than the non-diffraction caustic beams, and hence are able to propagate a longer distance. Moreover, the customized-LG beam exhibits self-healing ability when parts of their bodies are blocked. This new structure beam has potential applications in areas such as optical communication, soliton routing and steering, and optical tweezing.\u0000</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-24DOI: 10.1007/s11467-024-1404-9
Chang Lu, Shunhui Zhang, Meili Chen, Haitao Chen, Mengjian Zhu, Zhengwei Zhang, Jun He, Lin Zhang, Xiaoming Yuan
Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction. Considering the unique optical properties of CsPbI3 and transition metal dichalcogenides (TMDCs), their heterostructure presents potential applications in both photonics and optoelectronics fields. Here, we demonstrate selective growth of cubic phase CsPbI3 nanofilm with thickness as thin as 4.0 nm and zigzag/armchair oriented nanowires (NWs) on monolayer WSe2. Furthermore, we show growth of CsPbI3 on both transferred WSe2 on copper grid and WSe2–based optoelectrical devices, providing a platform for structure analysis and device performance modification. Transmission electron microscopy (TEM) results reveal the epitaxial nature of cubic CsPbI3 phase. The revealed growth fundamental of CsPbI3 is universal valid for other two-dimensional substrates, offering a great advantage to fabricate CsPbI3 based van der Waals heterostructures (vdWHs). X-ray photoelectron spectroscopy (XPS) and optical characterization confirm the type-II band alignment, resulting in a fast charge transfer process and the occurrence of a broad emission peak at lower energy. The formation of WSe2/CsPbI3 heterostructure largely enhances the photocurrent from 2.38 nA to 38.59 nA. These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.
{"title":"Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications","authors":"Chang Lu, Shunhui Zhang, Meili Chen, Haitao Chen, Mengjian Zhu, Zhengwei Zhang, Jun He, Lin Zhang, Xiaoming Yuan","doi":"10.1007/s11467-024-1404-9","DOIUrl":"https://doi.org/10.1007/s11467-024-1404-9","url":null,"abstract":"<p>Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction. Considering the unique optical properties of CsPbI<sub>3</sub> and transition metal dichalcogenides (TMDCs), their heterostructure presents potential applications in both photonics and optoelectronics fields. Here, we demonstrate selective growth of cubic phase CsPbI<sub>3</sub> nanofilm with thickness as thin as 4.0 nm and zigzag/armchair oriented nanowires (NWs) on monolayer WSe<sub>2</sub>. Furthermore, we show growth of CsPbI<sub>3</sub> on both transferred WSe<sub>2</sub> on copper grid and WSe<sub>2</sub>–based optoelectrical devices, providing a platform for structure analysis and device performance modification. Transmission electron microscopy (TEM) results reveal the epitaxial nature of cubic CsPbI<sub>3</sub> phase. The revealed growth fundamental of CsPbI<sub>3</sub> is universal valid for other two-dimensional substrates, offering a great advantage to fabricate CsPbI<sub>3</sub> based van der Waals heterostructures (vdWHs). X-ray photoelectron spectroscopy (XPS) and optical characterization confirm the type-II band alignment, resulting in a fast charge transfer process and the occurrence of a broad emission peak at lower energy. The formation of WSe<sub>2</sub>/CsPbI<sub>3</sub> heterostructure largely enhances the photocurrent from 2.38 nA to 38.59 nA. These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Metasurfaces and metagratings offer new platforms for electromagnetic wave control with significant responses. However, metasurfaces based on abrupt phase change and resonant structures suffer from the drawback of high loss and face challenges when applied in water waves. Therefore, the application of metasurfaces in water wave control is not ideal due to the limitations associated with high loss and other challenges. We have discovered that non-resonant metagratings exhibit promising effects in water wave control. Leveraging the similarity between bridges and metagratings, we have successfully developed a water wave metagrating model inspired by the ancient Luoyang Bridge in China. We conduct theoretical calculations and simulations on the metagrating and derive the equivalent anisotropic model of the metagrating. This model provides evidence that the metagrating has the capability to control water waves and achieve unidirectional surface water wave. The accuracy of our theory is strongly supported by the clear observation of the unidirectional propagation phenomenon during simulation and experiments conducted using a reduced version of the metagrating. It is the first time that the unidirectional propagation of water waves has been seen in water wave metagrating experiment. Above all, we realize the water wave metagrating experiment for the first time. By combining complex gratings with real bridges, we explore the physics embedded in the ancient building — Luoyang Bridge, which are of great significance for the water wave metagrating design and provide a new method for analyzing the effects of water waves on bridges. At the same time, this discovery also provides a new idea for ocean cargo transportation, ocean garbage cleaning, and the development and protection of ancient bridges.
{"title":"Unidirectional propagation of water waves near ancient Luoyang Bridge","authors":"Linkang Han, Qilin Duan, Junliang Duan, Shan Zhu, Shiming Chen, Yuhang Yin, Huanyang Chen","doi":"10.1007/s11467-024-1411-x","DOIUrl":"https://doi.org/10.1007/s11467-024-1411-x","url":null,"abstract":"<p>Metasurfaces and metagratings offer new platforms for electromagnetic wave control with significant responses. However, metasurfaces based on abrupt phase change and resonant structures suffer from the drawback of high loss and face challenges when applied in water waves. Therefore, the application of metasurfaces in water wave control is not ideal due to the limitations associated with high loss and other challenges. We have discovered that non-resonant metagratings exhibit promising effects in water wave control. Leveraging the similarity between bridges and metagratings, we have successfully developed a water wave metagrating model inspired by the ancient Luoyang Bridge in China. We conduct theoretical calculations and simulations on the metagrating and derive the equivalent anisotropic model of the metagrating. This model provides evidence that the metagrating has the capability to control water waves and achieve unidirectional surface water wave. The accuracy of our theory is strongly supported by the clear observation of the unidirectional propagation phenomenon during simulation and experiments conducted using a reduced version of the metagrating. It is the first time that the unidirectional propagation of water waves has been seen in water wave metagrating experiment. Above all, we realize the water wave metagrating experiment for the first time. By combining complex gratings with real bridges, we explore the physics embedded in the ancient building — Luoyang Bridge, which are of great significance for the water wave metagrating design and provide a new method for analyzing the effects of water waves on bridges. At the same time, this discovery also provides a new idea for ocean cargo transportation, ocean garbage cleaning, and the development and protection of ancient bridges.\u0000</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1007/s11467-024-1417-4
Jin-Man Chen, Ze-Rui Liang, De-Liang Yao
The low-energy antineutrino- and neutrino–nucleon neutral current elastic scattering is studied within the framework of the relativistic SU(2) baryon chiral perturbation theory up to the order of ({cal O}({p^{3}})). We have derived the model-independent hadronic amplitudes and extracted the form factors from them. It is found that differential cross sections dσ/dQ2 for the processes of (anti)neutrino–proton scattering are in good agreement with the existing MiniBooNE data in the Q2 region [0.13, 0.20] GeV2, where nuclear effects are expected to be negligible. For Q2 ≤ 0.13 GeV2, large deviation is observed, which is mainly owing to the sizeable Pauli blocking effect. Comparisons with the simulation data produced by the NuWro and GENIE Mento Carlo events generators are also discussed. The chiral results obtained in this work can be utilized as inputs in various nuclear models to achieve the goal of precise determination of the strangeness axial vector form factor, in particular when the low-energy MicroBooNE data are available in the near future.
{"title":"Low-energy elastic (anti)neutrino–nucleon scattering in covariant baryon chiral perturbation theory","authors":"Jin-Man Chen, Ze-Rui Liang, De-Liang Yao","doi":"10.1007/s11467-024-1417-4","DOIUrl":"https://doi.org/10.1007/s11467-024-1417-4","url":null,"abstract":"<p>The low-energy antineutrino- and neutrino–nucleon neutral current elastic scattering is studied within the framework of the relativistic <i>SU</i>(2) baryon chiral perturbation theory up to the order of <span>({cal O}({p^{3}}))</span>. We have derived the model-independent hadronic amplitudes and extracted the form factors from them. It is found that differential cross sections d<i>σ</i>/d<i>Q</i><sup>2</sup> for the processes of (anti)neutrino–proton scattering are in good agreement with the existing MiniBooNE data in the <i>Q</i><sup>2</sup> region [0.13, 0.20] GeV<sup>2</sup>, where nuclear effects are expected to be negligible. For <i>Q</i><sup>2</sup> ≤ 0.13 GeV<sup>2</sup>, large deviation is observed, which is mainly owing to the sizeable Pauli blocking effect. Comparisons with the simulation data produced by the NuWro and GENIE Mento Carlo events generators are also discussed. The chiral results obtained in this work can be utilized as inputs in various nuclear models to achieve the goal of precise determination of the strangeness axial vector form factor, in particular when the low-energy MicroBooNE data are available in the near future.\u0000</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications. However, the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted, also for the understanding of its formation mechanism. Herein, we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe2 nanosheets via chemical vapor deposition. Single-crystalline ultrathin 2D HfSe2 nanosheets were systematically grown by tuning the growth parameters, reaching the lateral size of 6–40 µm and the thickness down to 4.5 nm. The scalable amorphous HfO2 and HfSe2 heterostructures were achieved by the controllable oxidation, which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe2 templates. The crystal structure, elemental, and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf–O bonds, confirming the slow surface oxidation and lattice incorporation of oxygen atoms. The relatively smooth surface roughness and electrical potential change of HfO2–HfSe2 heterostructures indicate the excellent interface quality, which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 s. Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe2 nanosheets, also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.
{"title":"Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures","authors":"Wenlong Chu, Xilong Zhou, Ze Wang, Xiulian Fan, Xuehao Guo, Cheng Li, Jianling Yue, Fangping Ouyang, Jiong Zhao, Yu Zhou","doi":"10.1007/s11467-024-1414-7","DOIUrl":"https://doi.org/10.1007/s11467-024-1414-7","url":null,"abstract":"<p>Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications. However, the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted, also for the understanding of its formation mechanism. Herein, we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe<sub>2</sub> nanosheets via chemical vapor deposition. Single-crystalline ultrathin 2D HfSe<sub>2</sub> nanosheets were systematically grown by tuning the growth parameters, reaching the lateral size of 6–40 µm and the thickness down to 4.5 nm. The scalable amorphous HfO<sub>2</sub> and HfSe<sub>2</sub> heterostructures were achieved by the controllable oxidation, which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe<sub>2</sub> templates. The crystal structure, elemental, and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf–O bonds, confirming the slow surface oxidation and lattice incorporation of oxygen atoms. The relatively smooth surface roughness and electrical potential change of HfO<sub>2</sub>–HfSe<sub>2</sub> heterostructures indicate the excellent interface quality, which helps obtain the high performance memristor with high on/off ratio of 10<sup>5</sup> and long retention period over 9000 s. Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe<sub>2</sub> nanosheets, also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.\u0000</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141253511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-01DOI: 10.1007/s11467-024-1410-y
Emanuel A. L. Henn
{"title":"Quantum vortices get stretched","authors":"Emanuel A. L. Henn","doi":"10.1007/s11467-024-1410-y","DOIUrl":"https://doi.org/10.1007/s11467-024-1410-y","url":null,"abstract":"","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141406365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-31DOI: 10.1007/s11467-024-1408-5
Qingwang Bai, Mingxiang Xu
As an intrinsic magnetic topological insulator with magnetic order and non-trivial topological structure, MnBi2Te4 is an ideal material for studying exotic topological states such as quantum anomalous Hall effect and topological axion insulating states. Here, we carry out magnetic and electrical transport measurements on (Mn1−xGex)Bi2Te4 (x = 0, 0.15, 0.30, 0.45, 0.60, and 0.75) single crystals. It is found that with increasing x, the dilution of magnetic moments gradually weakens the antiferromagnetic exchange interaction. Moreover, Ge doping reduces the critical field of ferromagnetic ordering, which may provide a possible way to implement the quantum anomalous Hall effect at lower magnetic field. Electrical transport measurements suggest that electrons are the dominant charge carriers, and the carrier density increases with the Ge doping ratio. Additionally, the Kondo effect is observed in the samples with x = 0.45, 0.60, and 0.75. Our results suggest that doping germanium is a viable way to tune the magnetic and electrical transport properties of MnBi2Te4, opening up the possibility of future applications in magnetic topological insulators.
作为一种具有磁有序和非三重拓扑结构的本征磁性拓扑绝缘体,MnBi2Te4 是研究量子反常霍尔效应和拓扑轴心绝缘态等奇异拓扑态的理想材料。在这里,我们对 (Mn1-xGex)Bi2Te4(x = 0、0.15、0.30、0.45、0.60 和 0.75)单晶体进行了磁学和电学输运测量。研究发现,随着 x 的增加,磁矩的稀释会逐渐减弱反铁磁交换相互作用。此外,Ge 掺杂降低了铁磁有序的临界磁场,这为在较低磁场下实现量子反常霍尔效应提供了可能。电传输测量表明,电子是主要的电荷载流子,载流子密度随 Ge 掺杂比例的增加而增加。此外,在 x = 0.45、0.60 和 0.75 的样品中观察到了近藤效应。我们的研究结果表明,掺杂锗是调整 MnBi2Te4 的磁性和电性传输特性的一种可行方法,为未来应用于磁性拓扑绝缘体提供了可能。
{"title":"Magnetic and electrical transport study of the intrinsic magnetic topological insulator MnBi2Te4 with Ge doping","authors":"Qingwang Bai, Mingxiang Xu","doi":"10.1007/s11467-024-1408-5","DOIUrl":"https://doi.org/10.1007/s11467-024-1408-5","url":null,"abstract":"<p>As an intrinsic magnetic topological insulator with magnetic order and non-trivial topological structure, MnBi<sub>2</sub>Te<sub>4</sub> is an ideal material for studying exotic topological states such as quantum anomalous Hall effect and topological axion insulating states. Here, we carry out magnetic and electrical transport measurements on (Mn<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub>)Bi<sub>2</sub>Te<sub>4</sub> (<i>x</i> = 0, 0.15, 0.30, 0.45, 0.60, and 0.75) single crystals. It is found that with increasing <i>x</i>, the dilution of magnetic moments gradually weakens the antiferromagnetic exchange interaction. Moreover, Ge doping reduces the critical field of ferromagnetic ordering, which may provide a possible way to implement the quantum anomalous Hall effect at lower magnetic field. Electrical transport measurements suggest that electrons are the dominant charge carriers, and the carrier density increases with the Ge doping ratio. Additionally, the Kondo effect is observed in the samples with <i>x</i> = 0.45, 0.60, and 0.75. Our results suggest that doping germanium is a viable way to tune the magnetic and electrical transport properties of MnBi<sub>2</sub>Te<sub>4</sub>, opening up the possibility of future applications in magnetic topological insulators.\u0000</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141189840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Advancements in the experimental toolbox of cold atoms have enabled the meticulous control of atomic Bloch oscillation (BO) within optical lattices, thereby enhancing the capabilities of gravity interferometers. This work delves into the impact of thermal effects on Bloch oscillation in 1D accelerated optical lattices aligned with gravity by varying the system’s initial temperature. Through the application of Raman cooling, we effectively reduce the longitudinal thermal effect, stabilizing the longitudinal coherence length over the timescale of its lifetime. The atomic losses over multiple Bloch periods are measured, which are primarily attributed to transverse excitation. Furthermore, we identify two distinct inverse scaling behaviors in the oscillation lifetime scaled by the corresponding density with respect to temperatures, implying diverse equilibrium processes within or outside the Bose–Einstein condensate (BEC) regime. The competition between the system’s coherence and atomic density leads to a relatively smooth variation in the actual lifetime versus temperature. Our findings provide valuable insights into the interaction between thermal effects and BO, offering avenues for the refinement of quantum measurement technologies.
{"title":"Influence of thermal effects on atomic Bloch oscillation","authors":"Guoling Yin, Chi-Kin Lai, Nana Chang, Yi Liang, Dekai Mao, Xiaoji Zhou","doi":"10.1007/s11467-024-1420-9","DOIUrl":"https://doi.org/10.1007/s11467-024-1420-9","url":null,"abstract":"<p>Advancements in the experimental toolbox of cold atoms have enabled the meticulous control of atomic Bloch oscillation (BO) within optical lattices, thereby enhancing the capabilities of gravity interferometers. This work delves into the impact of thermal effects on Bloch oscillation in 1D accelerated optical lattices aligned with gravity by varying the system’s initial temperature. Through the application of Raman cooling, we effectively reduce the longitudinal thermal effect, stabilizing the longitudinal coherence length over the timescale of its lifetime. The atomic losses over multiple Bloch periods are measured, which are primarily attributed to transverse excitation. Furthermore, we identify two distinct inverse scaling behaviors in the oscillation lifetime scaled by the corresponding density with respect to temperatures, implying diverse equilibrium processes within or outside the Bose–Einstein condensate (BEC) regime. The competition between the system’s coherence and atomic density leads to a relatively smooth variation in the actual lifetime versus temperature. Our findings provide valuable insights into the interaction between thermal effects and BO, offering avenues for the refinement of quantum measurement technologies.\u0000</p>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":7.5,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141190034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}