Computational study of the structural, optoelectronic and thermoelectric properties of scandium-based ternary chalcogenides XScSe2 (X = Li, Rb) for applications in photovoltaic cell

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2023-11-23 DOI:10.1007/s10825-023-02110-z
Rabail Fatima, R. M. Arif Khalil, Muhammad Iqbal Hussain, Fayyaz Hussain
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Abstract

In the current study, the first principle technique that depends exclusively on density functional theory is used to explore the structural, optoelectronic and thermoelectric properties of scandium-based ternary chalcogenides XScSe2 (X = Li, Rb). The Full Potential Linearly Augmented Plane Wave (LAPW) method accompanied by PBE-GGA functional is used to determine the optimized lattice parameters of both chalcogenides. The valence band maxima (VBM) and conduction band minima (CBM) occur at the same wave vector having a significant direct band gap such as 1.42 eV for LiScSe2 and 1.54 eV for RbScSe2 leading to their semiconductor behavior. The results of the partial density of states (PDOS) of the considered substances reflect that 2s states of lithium, 3d states of each Rb and Sc, and 4p orbitals of Se are mainly responsible for the rise in electronic conductivity. The optical results show that these chalcogenides exhibit a significant rise in absorptivity and optical conductivity in the UV energy region when the photons are incident upon, where low reflectivity is noticed. The thermoelectric (TE) properties are also investigated through the BoltzTraP to understand the semi-classical Boltzmann transport theory. These results are prospective and provide a novel path for researchers to explore their potential applications in optoelectronic as well as thermoelectric devices.

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用于光伏电池的钪基三元硫族化合物XScSe2 (X = Li, Rb)的结构、光电和热电性能的计算研究
在目前的研究中,利用完全依赖于密度泛函理论的第一性原理技术来探索钪基三元硫族化合物XScSe2 (X = Li, Rb)的结构、光电和热电性质。采用PBE-GGA泛函的全势线性增广平面波(LAPW)方法确定了两种硫族化合物的优化晶格参数。价带最大值(VBM)和导带最小值(CBM)发生在相同的波矢量上,具有显著的直接带隙,如LiScSe2为1.42 eV, RbScSe2为1.54 eV,导致它们的半导体行为。所考虑物质的态偏密度(PDOS)结果表明,锂的2s态、Rb和Sc各的3d态以及Se的4p轨道是电子电导率上升的主要原因。光学结果表明,当光子入射时,这些硫族化合物在紫外能量区表现出明显的吸收率和光电导率上升,而反射率较低。通过玻尔兹阱研究了热电(TE)性质,以理解半经典玻尔兹曼输运理论。这些结果具有前瞻性,为研究人员探索其在光电和热电器件中的潜在应用提供了新的途径。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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