Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin-orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrX_n (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrX_n system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrX_n is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.