Electronic Properties of Chiral IrGe4 Studied by Angle Resolved Photoemission Spectroscopy and Band Structure Calculation

IF 1.5 4区物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY Journal of the Physical Society of Japan Pub Date : 2023-12-12 DOI:10.7566/jpsj.93.014702

Genki Hayashi, Taiki Shimaiwa, Mario Okawa, Naoki Nakamura, Ryuji Higashinaka, Tatsuma D. Matsuda, Yuji Aoki, Miho Kitamura, Daisuke Shiga, Hiroshi Kumigashira, Marek Kopciuszynski, Alexey Barinov, Naurang. L. Saini, Takashi Mizokawa

{"title":"Electronic Properties of Chiral IrGe4 Studied by Angle Resolved Photoemission Spectroscopy and Band Structure Calculation","authors":"Genki Hayashi, Taiki Shimaiwa, Mario Okawa, Naoki Nakamura, Ryuji Higashinaka, Tatsuma D. Matsuda, Yuji Aoki, Miho Kitamura, Daisuke Shiga, Hiroshi Kumigashira, Marek Kopciuszynski, Alexey Barinov, Naurang. L. Saini, Takashi Mizokawa","doi":"10.7566/jpsj.93.014702","DOIUrl":null,"url":null,"abstract":"We have investigated band structure of chiral IrGe4 by means of angle-resolved photoemission spectroscopy (ARPES) and band structure calculation. The band structure calculation predicts Kramers–Weyl degeneracy at the time reversal invariant momentum points. Although IrGe4 does not have a well-defined cleavage plane, we could observe momentum-dependent ARPES intensity modulations by ARPES. The ARPES intensity near the Fermi level was enhanced around the M and K points where the Ge 4p bands are located at about 0.3 eV below the Fermi level both in the calculation and in the experiment. Although the overall band dispersion of the Ge 4p and Ir 5d bands agrees with the calculation, surface states between the Kramers–Weyl points are not clearly observed probably due to roughness of the fractured surface.","PeriodicalId":17304,"journal":{"name":"Journal of the Physical Society of Japan","volume":"49 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Physical Society of Japan","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.7566/jpsj.93.014702","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

We have investigated band structure of chiral IrGe₄ by means of angle-resolved photoemission spectroscopy (ARPES) and band structure calculation. The band structure calculation predicts Kramers–Weyl degeneracy at the time reversal invariant momentum points. Although IrGe₄ does not have a well-defined cleavage plane, we could observe momentum-dependent ARPES intensity modulations by ARPES. The ARPES intensity near the Fermi level was enhanced around the M and K points where the Ge 4p bands are located at about 0.3 eV below the Fermi level both in the calculation and in the experiment. Although the overall band dispersion of the Ge 4p and Ir 5d bands agrees with the calculation, surface states between the Kramers–Weyl points are not clearly observed probably due to roughness of the fractured surface.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

通过角度分辨光发射光谱和带状结构计算研究手性 IrGe4 的电子特性

我们通过角度分辨光发射光谱（ARPES）和能带结构计算研究了手性 IrGe4 的能带结构。能带结构计算预测了时间反转不变量动量点的克拉默-韦勒退性。虽然 IrGe4 没有明确的裂解面，但我们可以通过 ARPES 观察到与动量相关的 ARPES 强度调制。在计算和实验中，费米水平附近的 ARPES 强度在 M 点和 K 点附近都有所增强，而 Ge 4p 带位于费米水平以下约 0.3 eV 处。虽然 Ge 4p 和 Ir 5d 带的整体带色散与计算结果一致，但可能由于断裂表面的粗糙度，在 Kramers-Weyl 点之间的表面态并没有被清楚地观察到。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Journal of the Physical Society of Japan 物理-物理：综合

CiteScore

3.40

自引率

17.60%

发文量

325

审稿时长

3 months

期刊介绍： The papers published in JPSJ should treat fundamental and novel problems of physics scientifically and logically, and contribute to the development in the understanding of physics. The concrete objects are listed below. Subjects Covered JPSJ covers all the fields of physics including (but not restricted to) Elementary particles and fields Nuclear physics Atomic and Molecular Physics Fluid Dynamics Plasma physics Physics of Condensed Matter Metal, Superconductor, Semiconductor, Magnetic Materials, Dielectric Materials Physics of Nanoscale Materials Optics and Quantum Electronics Physics of Complex Systems Mathematical Physics Chemical physics Biophysics Geophysics Astrophysics.