Yanan Zhao, Xiangzhao Meng, Shuting Peng, Guanghui Miao, Yuqiang Gao, Bin Peng, Wanzhao Cui, Zhongqiang Hu
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引用次数: 0
Abstract
CMOS compatible RF/microwave devices such as filters and amplifiers, have been widely used in wireless communication systems. However, it often exists on secondary electron emission phenomenon among those RF/microwave devices based o silicon (Si) wafers, especially in high-frequency range. In this paper, we have studied the major factors that influence the secondary electron yield (SEY) in commercial Si wafers with different doping concentrations. It shows that SEY is suppressed as the increase of doping concentrations, corresponding to a relatively short effective escape depth λ. Meanwhile, the reduced narrow band gap is beneficial to suppress the SEY by through the first-principles calculations, in which the absence of shallow energy band below the conduction band would easily capture electrons. Thus, the new physical mechanism combined the effective escape depth and band gap, would provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
期刊介绍:
Chinese Physics B is an international journal covering the latest developments and achievements in all branches of physics worldwide (with the exception of nuclear physics and physics of elementary particles and fields, which is covered by Chinese Physics C). It publishes original research papers and rapid communications reflecting creative and innovative achievements across the field of physics, as well as review articles covering important accomplishments in the frontiers of physics.
Subject coverage includes:
Condensed matter physics and the physics of materials
Atomic, molecular and optical physics
Statistical, nonlinear and soft matter physics
Plasma physics
Interdisciplinary physics.