Semyon V. Bachinin, Anastasia Lubimova, Artem Polushkin, Sergei S. Rzhevskii, Maria Timofeeva, Valentin A. Milichko
{"title":"MOF thin film memristor prototype of 10×10 memory cells for automated electronic data recording","authors":"Semyon V. Bachinin, Anastasia Lubimova, Artem Polushkin, Sergei S. Rzhevskii, Maria Timofeeva, Valentin A. Milichko","doi":"10.1016/j.photonics.2023.101222","DOIUrl":null,"url":null,"abstract":"<div><p>Metal–organic frameworks (MOFs) have recently emerged as a new class of functional materials<span> for opto- and micro-electronic applications. Herein, the transition from laboratory samples of devices to their prototypes remains a challenge. Here we report a prototype of memristive device based on MOF (HKUST-1). The MOF thin film with a thickness of 130 nm and a size of 1 × 1 in. has been fabricated Layer-by-layer technique on a conductive substrate followed by the deposition of top Ag contacts. A fully automated process of applying voltage to write the binary data (at 0.8 ± 0.1 V), read it (by 0.4 V) and then erase (by inverted polarity with 0.4 ± 0.1 V) made it potentially possible to process arbitrary words for at least 10 cycles. The provided prototype, consisting of 10 × 10 memory cells, opens up prospects for real-life application of MOF-based logic elements, as well as reveals the challenges for their fabrication and exploitation.</span></p></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics and Nanostructures-Fundamentals and Applications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1569441023001165","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Metal–organic frameworks (MOFs) have recently emerged as a new class of functional materials for opto- and micro-electronic applications. Herein, the transition from laboratory samples of devices to their prototypes remains a challenge. Here we report a prototype of memristive device based on MOF (HKUST-1). The MOF thin film with a thickness of 130 nm and a size of 1 × 1 in. has been fabricated Layer-by-layer technique on a conductive substrate followed by the deposition of top Ag contacts. A fully automated process of applying voltage to write the binary data (at 0.8 ± 0.1 V), read it (by 0.4 V) and then erase (by inverted polarity with 0.4 ± 0.1 V) made it potentially possible to process arbitrary words for at least 10 cycles. The provided prototype, consisting of 10 × 10 memory cells, opens up prospects for real-life application of MOF-based logic elements, as well as reveals the challenges for their fabrication and exploitation.
期刊介绍:
This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.